A workable use of the floating-body silicon-on-sapphire MOSFET as a transconductance mixer

Sang Lam*, Wai Kit Lee, Alain C.K. Chan, Philip K.T. Mok, Ping K. Ko, Mansun Chan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The operation, biasing, and measured performances of the floating-body silicon-on-sapphire (SOS) MOSFET as a single-gate FET upconversion mixer are presented. Despite the floating-body effects of the SOS MOSFET, the upconversion RF mixer operation is feasible by utilizing the approximate square-law transfer characteristics of the SOS MOSFETs. With a drawn gate length Lmin = 0.8 μm, the single-gate SOS MOSFET mixer gives an approximately 1.5-dB power conversion gain, an input-referred third-order intercept point (IP3) of 5dBm while requiring a local oscillator (LO) power of 5.5 dBm with an RF bandwidth of 2 GHz and an IF bandwidth of 400 MHz. The current consumption is about 8 mA with a 3 V voltage supply. The realization of a high output bandwidth and high IF RF mixer is demonstrated to be possible with the floating-body SOS MOSFET.

Original languageEnglish
Pages (from-to)2176-2179
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number4
Publication statusPublished - 1 Apr 2004
Externally publishedYes


  • Floating-body effects
  • Partially-depleted SOI MOSFET
  • Rf mixer
  • Sllicon-on-sapphire technology

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