A workable use of the floating-body silicon-on-sapphire MOSFET as a transconductance mixer

Sang Lam; Wai Kit Lee; Alain C.K. Chan; Philip K.T. Mok; Ping K. Ko; Mansun Chan

doi:10.1143/JJAP.43.2176

A workable use of the floating-body silicon-on-sapphire MOSFET as a transconductance mixer

Sang Lam^*, Wai Kit Lee, Alain C.K. Chan, Philip K.T. Mok, Ping K. Ko, Mansun Chan

^*Corresponding author for this work

Hong Kong University of Science and Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The operation, biasing, and measured performances of the floating-body silicon-on-sapphire (SOS) MOSFET as a single-gate FET upconversion mixer are presented. Despite the floating-body effects of the SOS MOSFET, the upconversion RF mixer operation is feasible by utilizing the approximate square-law transfer characteristics of the SOS MOSFETs. With a drawn gate length L_min = 0.8 _μm, the single-gate SOS MOSFET mixer gives an approximately 1.5-dB power conversion gain, an input-referred third-order intercept point (IP3) of 5dBm while requiring a local oscillator (LO) power of 5.5 dBm with an RF bandwidth of 2 GHz and an IF bandwidth of 400 MHz. The current consumption is about 8 mA with a 3 V voltage supply. The realization of a high output bandwidth and high IF RF mixer is demonstrated to be possible with the floating-body SOS MOSFET.

Original language	English
Pages (from-to)	2176-2179
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	43
Issue number	4
DOIs	https://doi.org/10.1143/JJAP.43.2176
Publication status	Published - 1 Apr 2004
Externally published	Yes

Keywords

Floating-body effects
Partially-depleted SOI MOSFET
RF CMOS
Rf mixer
Sllicon-on-sapphire technology

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10.1143/JJAP.43.2176

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title = "A workable use of the floating-body silicon-on-sapphire MOSFET as a transconductance mixer",

abstract = "The operation, biasing, and measured performances of the floating-body silicon-on-sapphire (SOS) MOSFET as a single-gate FET upconversion mixer are presented. Despite the floating-body effects of the SOS MOSFET, the upconversion RF mixer operation is feasible by utilizing the approximate square-law transfer characteristics of the SOS MOSFETs. With a drawn gate length Lmin = 0.8 μm, the single-gate SOS MOSFET mixer gives an approximately 1.5-dB power conversion gain, an input-referred third-order intercept point (IP3) of 5dBm while requiring a local oscillator (LO) power of 5.5 dBm with an RF bandwidth of 2 GHz and an IF bandwidth of 400 MHz. The current consumption is about 8 mA with a 3 V voltage supply. The realization of a high output bandwidth and high IF RF mixer is demonstrated to be possible with the floating-body SOS MOSFET.",

keywords = "Floating-body effects, Partially-depleted SOI MOSFET, RF CMOS, Rf mixer, Sllicon-on-sapphire technology",

author = "Sang Lam and Lee, {Wai Kit} and Chan, {Alain C.K.} and Mok, {Philip K.T.} and Ko, {Ping K.} and Mansun Chan",

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AU - Lam, Sang

AU - Lee, Wai Kit

AU - Chan, Alain C.K.

AU - Mok, Philip K.T.

AU - Ko, Ping K.

AU - Chan, Mansun

PY - 2004/4/1

Y1 - 2004/4/1

N2 - The operation, biasing, and measured performances of the floating-body silicon-on-sapphire (SOS) MOSFET as a single-gate FET upconversion mixer are presented. Despite the floating-body effects of the SOS MOSFET, the upconversion RF mixer operation is feasible by utilizing the approximate square-law transfer characteristics of the SOS MOSFETs. With a drawn gate length Lmin = 0.8 μm, the single-gate SOS MOSFET mixer gives an approximately 1.5-dB power conversion gain, an input-referred third-order intercept point (IP3) of 5dBm while requiring a local oscillator (LO) power of 5.5 dBm with an RF bandwidth of 2 GHz and an IF bandwidth of 400 MHz. The current consumption is about 8 mA with a 3 V voltage supply. The realization of a high output bandwidth and high IF RF mixer is demonstrated to be possible with the floating-body SOS MOSFET.

AB - The operation, biasing, and measured performances of the floating-body silicon-on-sapphire (SOS) MOSFET as a single-gate FET upconversion mixer are presented. Despite the floating-body effects of the SOS MOSFET, the upconversion RF mixer operation is feasible by utilizing the approximate square-law transfer characteristics of the SOS MOSFETs. With a drawn gate length Lmin = 0.8 μm, the single-gate SOS MOSFET mixer gives an approximately 1.5-dB power conversion gain, an input-referred third-order intercept point (IP3) of 5dBm while requiring a local oscillator (LO) power of 5.5 dBm with an RF bandwidth of 2 GHz and an IF bandwidth of 400 MHz. The current consumption is about 8 mA with a 3 V voltage supply. The realization of a high output bandwidth and high IF RF mixer is demonstrated to be possible with the floating-body SOS MOSFET.

KW - Floating-body effects

KW - Partially-depleted SOI MOSFET

KW - RF CMOS

KW - Rf mixer

KW - Sllicon-on-sapphire technology

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JO - Japanese Journal of Applied Physics

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ER -

A workable use of the floating-body silicon-on-sapphire MOSFET as a transconductance mixer

Abstract

Keywords

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