TY - JOUR
T1 - A wide-band T/R switch using enhanced compact waffle MOSFETs
AU - Wu, Wen
AU - Lam, Sang
AU - Chan, Mansun
N1 - Funding Information:
Manuscript received October 24, 2005; revised February 8, 2006. This work was supported by the Research Grant Council of Hong Kong under a Competitive Earmarked Research Grant. W. Wu and M. Chan are with the Hong Kong University of Science and Technology, Kowloon, Hong Kong (e-mail: eewuwen@ust.hk; mchan@ee.ust.hk). S. Lam is with the Microsystems Packaging Institute, Applied Technology Center, Research and Development Department, Hong Kong University of Science and Technology, Hong Kong (e-mail: eeslam@ee.ust.hk) Digital Object Identifier 10.1109/LMWC.2006.873495 Fig. 1. Layout design of an enhanced compact waffle MOSFET of (a) a basic waffle layout unit (3-by-3) and (b) a large-width MOSFET with duplicated waffle layout units.
PY - 2006/5
Y1 - 2006/5
N2 - A wide-band complementary metal oxide semiconductor (CMOS) transmit/receive (T/R) switch using enhanced compact waffle metal-oxide-semiconducor field-effect transistors (MOSFETs) is presented. The compact waffle layout configuration saves much active area to give a low on-resistance. Furthermore, the low drain-to-substrate capacitance (COB) in waffle MOSFETs can help reduce high frequency substrate coupling and substrate loss for CMOS radio frequency (RF)/microwave integrated circuits (ICs). A 2-dB higher maximum stable gain/maximum available gain (MSG/MAG) and a 2-GHz higher f max are obtained compared with those of conventional multifinger MOSFETs. The CMOS T/R switch implemented in a standard 0.35-μm CMOS technology gives a low insertion loss of 1.7 dB, high isolation of more than 40 dB, larger than 15-dB return loss, 7-dBm P 1 dB and 13-dBm input IP3 at 900 MHz with a 3-V supply voltage. The switch maintains a wide-band performance up to 2.4 GHz with only a slight deterioration.
AB - A wide-band complementary metal oxide semiconductor (CMOS) transmit/receive (T/R) switch using enhanced compact waffle metal-oxide-semiconducor field-effect transistors (MOSFETs) is presented. The compact waffle layout configuration saves much active area to give a low on-resistance. Furthermore, the low drain-to-substrate capacitance (COB) in waffle MOSFETs can help reduce high frequency substrate coupling and substrate loss for CMOS radio frequency (RF)/microwave integrated circuits (ICs). A 2-dB higher maximum stable gain/maximum available gain (MSG/MAG) and a 2-GHz higher f max are obtained compared with those of conventional multifinger MOSFETs. The CMOS T/R switch implemented in a standard 0.35-μm CMOS technology gives a low insertion loss of 1.7 dB, high isolation of more than 40 dB, larger than 15-dB return loss, 7-dBm P 1 dB and 13-dBm input IP3 at 900 MHz with a 3-V supply voltage. The switch maintains a wide-band performance up to 2.4 GHz with only a slight deterioration.
KW - Double throw (SPDT) switch
KW - Insertion loss
KW - Radio frequency (RF) transmit/receive (T/R) switch
KW - Single pole
KW - Waffle metal-oxide-semiconducor field-effect transistor (MOSFET)
UR - http://www.scopus.com/inward/record.url?scp=33646386652&partnerID=8YFLogxK
U2 - 10.1109/LMWC.2006.873495
DO - 10.1109/LMWC.2006.873495
M3 - Article
AN - SCOPUS:33646386652
SN - 1531-1309
VL - 16
SP - 287
EP - 289
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 5
ER -