A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure

Zhonghao Sun, Huolin Huang*, Nan Sun, Pengcheng Tao, Cezhou Zhao, Yung C. Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. The proposed devices exhibit high threshold voltage of 3.1 V, high peak transconductance of 213 mS, and much lower on-resistance of 0.53 mWcm2 while displaying better off-state characteristics owing to more uniform electric field distribution around the recessed gate edge in comparison to the conventional lateral HEMTs. The proposed scheme provides a new technical approach to realize high-performance normally-off HEMTs.

Original languageEnglish
Article number848
JournalMicromachines
Volume10
Issue number12
DOIs
Publication statusPublished - 1 Dec 2019

Keywords

  • Gallium nitride
  • High electron mobility transistors
  • Normally-off operation
  • Vertical gate structure
  • Wide-bandgap semiconductor

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