A Monolithic Gallium Nitride Driver with Zero-Voltage-Switching and Dead Time Control

Pingyu Cao; Yihua Wu; Yinchao Zhao; Miao Cui

doi:10.1109/ICICDT59917.2023.10332370

A Monolithic Gallium Nitride Driver with Zero-Voltage-Switching and Dead Time Control

Pingyu Cao, Yihua Wu, Yinchao Zhao, Miao Cui^*

^*Corresponding author for this work

Department of Electrical and Electronic Engineering

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

The Gallium Nitride (GaN)-based synchronous buck converter can reduce the power loss on the rectifier diode in an asynchronous buck converter. Dead time should be applied to avoid the shoot-through problem, while the length of the dead time will affect the efficiency of the synchronous buck converter. Therefore, the optimization of dead time is required to improve transmission efficiency. This paper proposes a driver circuit for the synchronous buck converter based on GaN devices with zero-voltage-switching (ZVS) capability and dead time self-adjustment. This work is based on advanced design system (ADS) software. The simulation results indicate that the dead time was reduced from 0.5 μs to 0.084 μs, and the efficiency can be improved from 87.82% to 94.18% when the load resistance is 50 Ω.

Original language	English
Title of host publication	Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023
Editors	Duy-Hieu Bui
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	57-60
Number of pages	4
ISBN (Electronic)	9798350319316
DOIs	https://doi.org/10.1109/ICICDT59917.2023.10332370
Publication status	Published - 2023
Event	2023 International Conference on IC Design and Technology, ICICDT 2023 - Tokyo, Japan Duration: 25 Sept 2023 → 27 Sept 2023

Publication series

Name	Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023

Conference

Conference	2023 International Conference on IC Design and Technology, ICICDT 2023
Country/Territory	Japan
City	Tokyo
Period	25/09/23 → 27/09/23

Keywords

dead time control
GaN driver
synchronous buck converter
zero-voltage-switching

Access to Document

10.1109/ICICDT59917.2023.10332370

Cite this

Cao, P., Wu, Y., Zhao, Y., & Cui, M. (2023). A Monolithic Gallium Nitride Driver with Zero-Voltage-Switching and Dead Time Control. In D.-H. Bui (Ed.), Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023 (pp. 57-60). (Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT59917.2023.10332370

Cao, Pingyu ; Wu, Yihua ; Zhao, Yinchao et al. / A Monolithic Gallium Nitride Driver with Zero-Voltage-Switching and Dead Time Control. Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023. editor / Duy-Hieu Bui. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 57-60 (Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023).

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title = "A Monolithic Gallium Nitride Driver with Zero-Voltage-Switching and Dead Time Control",

abstract = "The Gallium Nitride (GaN)-based synchronous buck converter can reduce the power loss on the rectifier diode in an asynchronous buck converter. Dead time should be applied to avoid the shoot-through problem, while the length of the dead time will affect the efficiency of the synchronous buck converter. Therefore, the optimization of dead time is required to improve transmission efficiency. This paper proposes a driver circuit for the synchronous buck converter based on GaN devices with zero-voltage-switching (ZVS) capability and dead time self-adjustment. This work is based on advanced design system (ADS) software. The simulation results indicate that the dead time was reduced from 0.5 μs to 0.084 μs, and the efficiency can be improved from 87.82% to 94.18% when the load resistance is 50 Ω.",

keywords = "dead time control, GaN driver, synchronous buck converter, zero-voltage-switching",

author = "Pingyu Cao and Yihua Wu and Yinchao Zhao and Miao Cui",

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doi = "10.1109/ICICDT59917.2023.10332370",

language = "English",

series = "Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023",

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Cao, P, Wu, Y, Zhao, Y & Cui, M 2023, A Monolithic Gallium Nitride Driver with Zero-Voltage-Switching and Dead Time Control. in D-H Bui (ed.), Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023. Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023, Institute of Electrical and Electronics Engineers Inc., pp. 57-60, 2023 International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, 25/09/23. https://doi.org/10.1109/ICICDT59917.2023.10332370

A Monolithic Gallium Nitride Driver with Zero-Voltage-Switching and Dead Time Control. / Cao, Pingyu; Wu, Yihua; Zhao, Yinchao et al.
Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023. ed. / Duy-Hieu Bui. Institute of Electrical and Electronics Engineers Inc., 2023. p. 57-60 (Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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PY - 2023

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AB - The Gallium Nitride (GaN)-based synchronous buck converter can reduce the power loss on the rectifier diode in an asynchronous buck converter. Dead time should be applied to avoid the shoot-through problem, while the length of the dead time will affect the efficiency of the synchronous buck converter. Therefore, the optimization of dead time is required to improve transmission efficiency. This paper proposes a driver circuit for the synchronous buck converter based on GaN devices with zero-voltage-switching (ZVS) capability and dead time self-adjustment. This work is based on advanced design system (ADS) software. The simulation results indicate that the dead time was reduced from 0.5 μs to 0.084 μs, and the efficiency can be improved from 87.82% to 94.18% when the load resistance is 50 Ω.

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Cao P, Wu Y, Zhao Y, Cui M. A Monolithic Gallium Nitride Driver with Zero-Voltage-Switching and Dead Time Control. In Bui DH, editor, Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 57-60. (Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023). doi: 10.1109/ICICDT59917.2023.10332370

A Monolithic Gallium Nitride Driver with Zero-Voltage-Switching and Dead Time Control

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