A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs

Gang Lyu, Jin Wei*, Wenjie Song, Zheyang Zheng, Li Zhang, Jie Zhang, Yan Cheng, Sirui Feng, Yat Hon Ng, Tao Chen, Kailun Zhong, Jiapeng Liu, Rong Zeng, Kevin J. Chen

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

8 Citations (Scopus)

Abstract

A novel GaN power IC platform on engineered bulk Si (EBUS) substrate is demonstrated for monolithic integration of 200-V high-side and low-side p-GaN HEMTs of a half-bridge circuit. The engineered substrate features a P+-N-doping profile realized by P-Type implantation into an N-Type (111) Si wafer. The P+ Si layer is then split into P+ islands using deep trenches and are effectively isolated through back-To-back PN junctions. The P+ island provides a local electrical substrate for the overlaying GaN HEMT, while all GaN HEMTs share the same bulk Si wafer; such configuration enables monolithic GaN power integration with eliminated crosstalk associated with conventional bulk Si that serves as a common electrical substrate.

Original languageEnglish
Title of host publication2021 IEEE International Electron Devices Meeting, IEDM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages5.2.1-5.2.4
ISBN (Electronic)9781665425728
DOIs
Publication statusPublished - 2021
Externally publishedYes
Event2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States
Duration: 11 Dec 202116 Dec 2021

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2021-December
ISSN (Print)0163-1918

Conference

Conference2021 IEEE International Electron Devices Meeting, IEDM 2021
Country/TerritoryUnited States
CitySan Francisco
Period11/12/2116/12/21

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