A Continuous K-Band Phase Shifter Based on Injection-Locked Dual Voltage-Controlled Oscillators

Xuepu Wu; Yunshi Li; Liying Cai; Xiaopeng Yu; Zhiwei Xu; Jiangmin Gu

doi:10.1109/LMWC.2022.3166798

A Continuous K-Band Phase Shifter Based on Injection-Locked Dual Voltage-Controlled Oscillators

Xuepu Wu, Yunshi Li, Liying Cai, Xiaopeng Yu^*, Zhiwei Xu, Jiangmin Gu

^*Corresponding author for this work

Department of Electrical and Electronic Engineering

Zhejiang University

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this letter, a K-band signal generation phase shifter (SGPS) is implemented using a standard 55-nm complementary metal-oxide semiconductor (CMOS). Its phase shifting is achieved by injecting signal of a voltage-controlled oscillator (VCO) to the other through an injection buffer. Besides continuous phase shift, it can offer a signal source, facilitating multi-phase signal generation in phase array transceivers. Measurement results suggest the prototype implemented in 55-nm CMOS is able to provide a frequency tuning range of 22.5 to 24.8 GHz and minimal output power of 5.2 dBm. It demonstrates a maximal tuning phase of 45.5°.

Original language	English
Pages (from-to)	1067-1070
Number of pages	4
Journal	IEEE Microwave and Wireless Components Letters
Volume	32
Issue number	9
DOIs	https://doi.org/10.1109/LMWC.2022.3166798
Publication status	Published - 1 Sept 2022

Keywords

Complementary metal-oxide semiconductor (CMOS)
K-band
injection lock
phase shift
voltage-controlled oscillator (VCO)

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10.1109/LMWC.2022.3166798

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abstract = "In this letter, a K-band signal generation phase shifter (SGPS) is implemented using a standard 55-nm complementary metal-oxide semiconductor (CMOS). Its phase shifting is achieved by injecting signal of a voltage-controlled oscillator (VCO) to the other through an injection buffer. Besides continuous phase shift, it can offer a signal source, facilitating multi-phase signal generation in phase array transceivers. Measurement results suggest the prototype implemented in 55-nm CMOS is able to provide a frequency tuning range of 22.5 to 24.8 GHz and minimal output power of 5.2 dBm. It demonstrates a maximal tuning phase of 45.5°.",

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AU - Li, Yunshi

AU - Cai, Liying

AU - Yu, Xiaopeng

AU - Xu, Zhiwei

AU - Gu, Jiangmin

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AB - In this letter, a K-band signal generation phase shifter (SGPS) is implemented using a standard 55-nm complementary metal-oxide semiconductor (CMOS). Its phase shifting is achieved by injecting signal of a voltage-controlled oscillator (VCO) to the other through an injection buffer. Besides continuous phase shift, it can offer a signal source, facilitating multi-phase signal generation in phase array transceivers. Measurement results suggest the prototype implemented in 55-nm CMOS is able to provide a frequency tuning range of 22.5 to 24.8 GHz and minimal output power of 5.2 dBm. It demonstrates a maximal tuning phase of 45.5°.

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KW - injection lock

KW - phase shift

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A Continuous K-Band Phase Shifter Based on Injection-Locked Dual Voltage-Controlled Oscillators

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