A comparative study of RF noise characteristics of different submicron SOI MOSFET structures on SIMOX technology

Sang Lam, Hongmei Wang, Wai Kit Lee, P. K. Ko, Mansun Chan

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review


Summary form only given. The silicon-on-insulator (SOI) CMOS technology has been attractive for radio frequency (RF) integrated circuits due to its advantages of reduced parasitic capacitance, minimal substrate loss and noise coupling, and monolithic integration of high-Q passive components. However, there are various choices of SOI device structures such as fully depleted (FD), partially depleted (PD) and dynamic threshold (DT) MOSFET's. While the relative merits of the SOI devices in terms of current driving capability, small-signal gain and maximum cut-off frequencies have been extensively studied, the direct comparisons of their noise performance at gigahertz frequencies are very few in the literature. In order to fill the gap, we have performed extensive RF noise characterizations of the common SOI devices together with the effects of scaling, body contact scheme, and operation conditions.

Original languageEnglish
Title of host publication60th Device Research Conference, DRC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)0780373170
Publication statusPublished - 2002
Externally publishedYes
Event60th Device Research Conference, DRC 2002 - Santa Barbara, United States
Duration: 24 Jun 200226 Jun 2002

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference60th Device Research Conference, DRC 2002
Country/TerritoryUnited States
CitySanta Barbara


  • CMOS integrated circuits
  • CMOS technology
  • Cutoff frequency
  • Integrated circuit noise
  • Integrated circuit technology
  • MOSFET circuits
  • Monolithic integrated circuits
  • Radio frequency
  • Radiofrequency integrated circuits
  • Silicon on insulator technology


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