TY - GEN
T1 - A comparative study of RF noise characteristics of different submicron SOI MOSFET structures on SIMOX technology
AU - Lam, Sang
AU - Wang, Hongmei
AU - Lee, Wai Kit
AU - Ko, P. K.
AU - Chan, Mansun
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - Summary form only given. The silicon-on-insulator (SOI) CMOS technology has been attractive for radio frequency (RF) integrated circuits due to its advantages of reduced parasitic capacitance, minimal substrate loss and noise coupling, and monolithic integration of high-Q passive components. However, there are various choices of SOI device structures such as fully depleted (FD), partially depleted (PD) and dynamic threshold (DT) MOSFET's. While the relative merits of the SOI devices in terms of current driving capability, small-signal gain and maximum cut-off frequencies have been extensively studied, the direct comparisons of their noise performance at gigahertz frequencies are very few in the literature. In order to fill the gap, we have performed extensive RF noise characterizations of the common SOI devices together with the effects of scaling, body contact scheme, and operation conditions.
AB - Summary form only given. The silicon-on-insulator (SOI) CMOS technology has been attractive for radio frequency (RF) integrated circuits due to its advantages of reduced parasitic capacitance, minimal substrate loss and noise coupling, and monolithic integration of high-Q passive components. However, there are various choices of SOI device structures such as fully depleted (FD), partially depleted (PD) and dynamic threshold (DT) MOSFET's. While the relative merits of the SOI devices in terms of current driving capability, small-signal gain and maximum cut-off frequencies have been extensively studied, the direct comparisons of their noise performance at gigahertz frequencies are very few in the literature. In order to fill the gap, we have performed extensive RF noise characterizations of the common SOI devices together with the effects of scaling, body contact scheme, and operation conditions.
KW - CMOS integrated circuits
KW - CMOS technology
KW - Cutoff frequency
KW - Integrated circuit noise
KW - Integrated circuit technology
KW - MOSFET circuits
KW - Monolithic integrated circuits
KW - Radio frequency
KW - Radiofrequency integrated circuits
KW - Silicon on insulator technology
UR - http://www.scopus.com/inward/record.url?scp=84948671886&partnerID=8YFLogxK
U2 - 10.1109/DRC.2002.1029599
DO - 10.1109/DRC.2002.1029599
M3 - Conference Proceeding
AN - SCOPUS:84948671886
T3 - Device Research Conference - Conference Digest, DRC
SP - 197
EP - 198
BT - 60th Device Research Conference, DRC 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 60th Device Research Conference, DRC 2002
Y2 - 24 June 2002 through 26 June 2002
ER -