A Compact High-Isolation V-Band Millimeter Wave Wilkinson Power Divider Design in 65-nm CMOS Process

Hongyu Bao; Sang Lam

doi:10.1109/ICMMT58241.2023.10276481

A Compact High-Isolation V-Band Millimeter Wave Wilkinson Power Divider Design in 65-nm CMOS Process

Hongyu Bao^*, Sang Lam^*

^*Corresponding author for this work

Department of Electrical and Electronic Engineering

Nanyang Technological University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

Slim on-chip transmission lines of a quasi-rectangular coaxial structure are used to construct a 2-way Wilkinson power divider for millimeter-wave integrated circuits (ICs) in the V-band. With the ground-shielding metal layers surrounding the central core, a meandered design is adopted for the two quarter-wavelength transmission line segments and makes the power divider very compact. It also provides very high signal isolation from neighbouring devices and the resistive semiconductor substrate. In a 65-nm CMOS process, the power divider design occupies a chip area of only 285 × 67 μm² (≈ 0.019 mm²). A low power loss and a very high isolation between the output ports are maintained in a frequency range from 50 to 75 GHz, achieving |S₂₁| = -3.95 dB (with the 3 dB power division loss included), |S₂₃| = -29 dB and |S₁₁| = -29.5 dB, all at 60 GHz.

Original language	English
Title of host publication	2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350338874
DOIs	https://doi.org/10.1109/ICMMT58241.2023.10276481
Publication status	Published - 2023
Event	15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Qingdao, China Duration: 14 May 2023 → 17 May 2023

Publication series

Name	2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings

Conference

Conference	15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023
Country/Territory	China
City	Qingdao
Period	14/05/23 → 17/05/23

Keywords

V-band
Wilkinson power divider
millimeter-wave CMOS design
mm-wave ICs
monolithic microwave integrated circuits
on-chip transmission line
power combiner

Access to Document

10.1109/ICMMT58241.2023.10276481

Cite this

Bao, H., & Lam, S. (2023). A Compact High-Isolation V-Band Millimeter Wave Wilkinson Power Divider Design in 65-nm CMOS Process. In 2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings (2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMMT58241.2023.10276481

Bao, Hongyu ; Lam, Sang. / A Compact High-Isolation V-Band Millimeter Wave Wilkinson Power Divider Design in 65-nm CMOS Process. 2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings).

@inproceedings{598dc6df8a2045818cfe5ab3219ead3f,

title = "A Compact High-Isolation V-Band Millimeter Wave Wilkinson Power Divider Design in 65-nm CMOS Process",

abstract = "Slim on-chip transmission lines of a quasi-rectangular coaxial structure are used to construct a 2-way Wilkinson power divider for millimeter-wave integrated circuits (ICs) in the V-band. With the ground-shielding metal layers surrounding the central core, a meandered design is adopted for the two quarter-wavelength transmission line segments and makes the power divider very compact. It also provides very high signal isolation from neighbouring devices and the resistive semiconductor substrate. In a 65-nm CMOS process, the power divider design occupies a chip area of only 285 × 67 μm2 (≈ 0.019 mm2). A low power loss and a very high isolation between the output ports are maintained in a frequency range from 50 to 75 GHz, achieving |S21| = -3.95 dB (with the 3 dB power division loss included), |S23| = -29 dB and |S11| = -29.5 dB, all at 60 GHz.",

keywords = "V-band, Wilkinson power divider, millimeter-wave CMOS design, mm-wave ICs, monolithic microwave integrated circuits, on-chip transmission line, power combiner",

author = "Hongyu Bao and Sang Lam",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 ; Conference date: 14-05-2023 Through 17-05-2023",

year = "2023",

doi = "10.1109/ICMMT58241.2023.10276481",

language = "English",

series = "2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Bao, H & Lam, S 2023, A Compact High-Isolation V-Band Millimeter Wave Wilkinson Power Divider Design in 65-nm CMOS Process. in 2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings. 2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023, Qingdao, China, 14/05/23. https://doi.org/10.1109/ICMMT58241.2023.10276481

A Compact High-Isolation V-Band Millimeter Wave Wilkinson Power Divider Design in 65-nm CMOS Process. / Bao, Hongyu; Lam, Sang.
2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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AU - Bao, Hongyu

AU - Lam, Sang

PY - 2023

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N2 - Slim on-chip transmission lines of a quasi-rectangular coaxial structure are used to construct a 2-way Wilkinson power divider for millimeter-wave integrated circuits (ICs) in the V-band. With the ground-shielding metal layers surrounding the central core, a meandered design is adopted for the two quarter-wavelength transmission line segments and makes the power divider very compact. It also provides very high signal isolation from neighbouring devices and the resistive semiconductor substrate. In a 65-nm CMOS process, the power divider design occupies a chip area of only 285 × 67 μm2 (≈ 0.019 mm2). A low power loss and a very high isolation between the output ports are maintained in a frequency range from 50 to 75 GHz, achieving |S21| = -3.95 dB (with the 3 dB power division loss included), |S23| = -29 dB and |S11| = -29.5 dB, all at 60 GHz.

AB - Slim on-chip transmission lines of a quasi-rectangular coaxial structure are used to construct a 2-way Wilkinson power divider for millimeter-wave integrated circuits (ICs) in the V-band. With the ground-shielding metal layers surrounding the central core, a meandered design is adopted for the two quarter-wavelength transmission line segments and makes the power divider very compact. It also provides very high signal isolation from neighbouring devices and the resistive semiconductor substrate. In a 65-nm CMOS process, the power divider design occupies a chip area of only 285 × 67 μm2 (≈ 0.019 mm2). A low power loss and a very high isolation between the output ports are maintained in a frequency range from 50 to 75 GHz, achieving |S21| = -3.95 dB (with the 3 dB power division loss included), |S23| = -29 dB and |S11| = -29.5 dB, all at 60 GHz.

KW - V-band

KW - Wilkinson power divider

KW - millimeter-wave CMOS design

KW - mm-wave ICs

KW - monolithic microwave integrated circuits

KW - on-chip transmission line

KW - power combiner

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BT - 2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023

Y2 - 14 May 2023 through 17 May 2023

ER -

Bao H, Lam S. A Compact High-Isolation V-Band Millimeter Wave Wilkinson Power Divider Design in 65-nm CMOS Process. In 2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings). doi: 10.1109/ICMMT58241.2023.10276481

A Compact High-Isolation V-Band Millimeter Wave Wilkinson Power Divider Design in 65-nm CMOS Process

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