A 35 V-5 V monolithic integrated GaN-based DC-DC floating buck converter

Yuhao Zhu, Haodong Su, Fan Li, Ang Li, Xiaohaoyang Lei, Miao Cui, Wen Cheng Lai, Huiqing Wen, Wen Liu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The paper presents the development of a GaN DC-DC power converter with a pre-driver module and power device based on a monolithic integrated GaN E/D-mode metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) platform. The pre-driver module with direct coupled field effect transistor logic circuit structure has been monolithically integrated with a GaN power transistor on a Si-based AlGaN/GaN commercial epitaxial wafer. The MIS-HEMTs structure adopts an insulated gate dielectric layer to suppress the leakage current and increase gate voltage robustness. The GaN-based floating buck converter employs a 1 mH inductor and a 9 μF capacitor to achieve 35 V-5 V power conversion. As a result, the pre-driver module is capable of delivering a 10 V driving voltage. GaN monolithic integration of the pre-driver module and power device can reduce the system area in the DC-DC application, which allows for an integrated chip size of 1.8

Original languageEnglish
Article number095001
JournalSemiconductor Science and Technology
Issue number9
Publication statusPublished - Sept 2023


  • buck circuits
  • GaN integration circuits (ICs)
  • integrated gate drivers
  • power converter


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