120 Gb/s all-optical NAND logic gate using reflective semiconductor optical amplifiers

Amer Kotb*, Chunlei Guo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

In this paper, the unique features of the reflective semiconductor optical amplifiers (RSOAs) are exploited to numerically simulate the ultrafast performance of an all-optical NOT-AND (NAND) logic gate for the first time using a return-to-zero modulation format at a data rate of 120 Gb/s. A comparison is made between RSOAs and conventional SOAs through studying the dependence of the gate’s quality factor (QF) on the critical operational parameters, including the effects of both amplified spontaneous emission and operating temperature to get more realistic results. The results show that the all-optical NAND logic gate can be executed at 120 Gb/s using the RSOAs scheme with a higher QF than when using conventional SOAs.

Original languageEnglish
Pages (from-to)1138-1144
Number of pages7
JournalJournal of Modern Optics
Volume67
Issue number12
DOIs
Publication statusPublished - 11 Jul 2020
Externally publishedYes

Keywords

  • All-optical NAND logic gate
  • quality factor
  • reflective semiconductor optical amplifiers

Fingerprint

Dive into the research topics of '120 Gb/s all-optical NAND logic gate using reflective semiconductor optical amplifiers'. Together they form a unique fingerprint.

Cite this