一种用双氧水提高抗辐射性的薄膜晶体管器件

Translated title of the contribution: Thin film transistor device for improving radiation resistance by using hydrogen peroxide

Yuxiao Fang (Inventor), Chun Zhao (Inventor), Cezhou Zhao (Inventor), Li Yang (Inventor)

Research output: Patent

Translated title of the contributionThin film transistor device for improving radiation resistance by using hydrogen peroxide
Original languageChinese (Simplified)
Patent granted numberCN210866188U
Validity date26/06/29
Publication statusPublished - 26 Jun 2020

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