| Translated title of the contribution | Gallium nitride high electron mobility transistor and preparation method and application thereof |
|---|---|
| Original language | Chinese (Simplified) |
| Patent granted number | CN 113437147 B |
| Validity date | 25/06/41 |
| Publication status | Published - 10 Sept 2024 |
一种氮化镓高电子迁移率晶体管及其制备方法与应用
Fan Li (Inventor), Yuanlei Zhang (Inventor), Wen Liu (Inventor), Cezhou Zhao (Inventor)
Research output: Patent