Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing

Ruolan Shi; Zixuan Zhang; Miao Cui; Sang Lam

doi:10.1109/ICICM59499.2023.10365756

Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing

Ruolan Shi
, Zixuan Zhang
, Miao Cui
, Sang Lam^*

^*Corresponding author for this work

Xi'an Jiaotong-Liverpool University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

On-wafer measurements were performed for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) configured as single-ended radio-frequency (RF) mixers. While the depletion-mode (D-mode) HEMTs have a negative threshold voltage, the RF passive mixer design requires no negative biasing and draws no electrical power. A conversion loss as small as 13 dB is obtained, which is quite close to the ideal value of 9.9 dB for a single-ended passive mixer using a perfect switch. The 1-dB compression point (at the input) ranges from -1.3dBm to 5 dBm for different aspect ratios of the MIS-HEMTs. With a local oscillator (LO) power of 1 dBm, an input third order intercept point (IP3) of 12 dBm is obtained for a MIS-HEMT of W/L = 100/3, achieving a linear efficiency of 11 dB. The experimental results demonstrate the workable use of D-mode MIS-HEMTs as they are in realizing RF mixers for development of RFICs on gallium nitride (GaN) technology. With adjusted design, the normally-on device property of the MIS-HEMTs does not deter their direct use in proper circuit construction.

Original language	English
Title of host publication	2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	427-431
Number of pages	5
ISBN (Electronic)	9798350318517
DOIs	https://doi.org/10.1109/ICICM59499.2023.10365756
Publication status	Published - 2023
Event	8th International Conference on Integrated Circuits and Microsystems, ICICM 2023 - Nanjing, China Duration: 20 Oct 2023 → 23 Oct 2023

Publication series

Name	2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023

Conference

Conference	8th International Conference on Integrated Circuits and Microsystems, ICICM 2023
Country/Territory	China
City	Nanjing
Period	20/10/23 → 23/10/23

Keywords

D-mode MIS-HEMT
depletion-mode FET
gallium nitride (GaN)
linearity
passive mixer
RF mixer

Access to Document

10.1109/ICICM59499.2023.10365756

Cite this

Shi, R., Zhang, Z., Cui, M., & Lam, S. (2023). Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing. In 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023 (pp. 427-431). (2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICM59499.2023.10365756

Shi, Ruolan ; Zhang, Zixuan ; Cui, Miao et al. / Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing. 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 427-431 (2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023).

@inproceedings{2050bfbb894e481dbbcd65196c9cef1b,

title = "Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing",

abstract = "On-wafer measurements were performed for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) configured as single-ended radio-frequency (RF) mixers. While the depletion-mode (D-mode) HEMTs have a negative threshold voltage, the RF passive mixer design requires no negative biasing and draws no electrical power. A conversion loss as small as 13 dB is obtained, which is quite close to the ideal value of 9.9 dB for a single-ended passive mixer using a perfect switch. The 1-dB compression point (at the input) ranges from -1.3dBm to 5 dBm for different aspect ratios of the MIS-HEMTs. With a local oscillator (LO) power of 1 dBm, an input third order intercept point (IP3) of 12 dBm is obtained for a MIS-HEMT of W/L = 100/3, achieving a linear efficiency of 11 dB. The experimental results demonstrate the workable use of D-mode MIS-HEMTs as they are in realizing RF mixers for development of RFICs on gallium nitride (GaN) technology. With adjusted design, the normally-on device property of the MIS-HEMTs does not deter their direct use in proper circuit construction.",

keywords = "D-mode MIS-HEMT, depletion-mode FET, gallium nitride (GaN), linearity, passive mixer, RF mixer",

author = "Ruolan Shi and Zixuan Zhang and Miao Cui and Sang Lam",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023 ; Conference date: 20-10-2023 Through 23-10-2023",

year = "2023",

doi = "10.1109/ICICM59499.2023.10365756",

language = "English",

series = "2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "427--431",

booktitle = "2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023",

}

Shi, R, Zhang, Z, Cui, M & Lam, S 2023, Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing. in 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023. 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023, Institute of Electrical and Electronics Engineers Inc., pp. 427-431, 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023, Nanjing, China, 20/10/23. https://doi.org/10.1109/ICICM59499.2023.10365756

Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing. / Shi, Ruolan; Zhang, Zixuan; Cui, Miao et al.
2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 427-431 (2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing

AU - Shi, Ruolan

AU - Zhang, Zixuan

AU - Cui, Miao

AU - Lam, Sang

PY - 2023

Y1 - 2023

N2 - On-wafer measurements were performed for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) configured as single-ended radio-frequency (RF) mixers. While the depletion-mode (D-mode) HEMTs have a negative threshold voltage, the RF passive mixer design requires no negative biasing and draws no electrical power. A conversion loss as small as 13 dB is obtained, which is quite close to the ideal value of 9.9 dB for a single-ended passive mixer using a perfect switch. The 1-dB compression point (at the input) ranges from -1.3dBm to 5 dBm for different aspect ratios of the MIS-HEMTs. With a local oscillator (LO) power of 1 dBm, an input third order intercept point (IP3) of 12 dBm is obtained for a MIS-HEMT of W/L = 100/3, achieving a linear efficiency of 11 dB. The experimental results demonstrate the workable use of D-mode MIS-HEMTs as they are in realizing RF mixers for development of RFICs on gallium nitride (GaN) technology. With adjusted design, the normally-on device property of the MIS-HEMTs does not deter their direct use in proper circuit construction.

AB - On-wafer measurements were performed for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) configured as single-ended radio-frequency (RF) mixers. While the depletion-mode (D-mode) HEMTs have a negative threshold voltage, the RF passive mixer design requires no negative biasing and draws no electrical power. A conversion loss as small as 13 dB is obtained, which is quite close to the ideal value of 9.9 dB for a single-ended passive mixer using a perfect switch. The 1-dB compression point (at the input) ranges from -1.3dBm to 5 dBm for different aspect ratios of the MIS-HEMTs. With a local oscillator (LO) power of 1 dBm, an input third order intercept point (IP3) of 12 dBm is obtained for a MIS-HEMT of W/L = 100/3, achieving a linear efficiency of 11 dB. The experimental results demonstrate the workable use of D-mode MIS-HEMTs as they are in realizing RF mixers for development of RFICs on gallium nitride (GaN) technology. With adjusted design, the normally-on device property of the MIS-HEMTs does not deter their direct use in proper circuit construction.

KW - D-mode MIS-HEMT

KW - depletion-mode FET

KW - gallium nitride (GaN)

KW - linearity

KW - passive mixer

KW - RF mixer

UR - https://www.scopus.com/pages/publications/85182737183

U2 - 10.1109/ICICM59499.2023.10365756

DO - 10.1109/ICICM59499.2023.10365756

M3 - Conference Proceeding

AN - SCOPUS:85182737183

T3 - 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023

SP - 427

EP - 431

BT - 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023

Y2 - 20 October 2023 through 23 October 2023

ER -

Shi R, Zhang Z, Cui M , Lam S. Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing. In 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 427-431. (2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023). doi: 10.1109/ICICM59499.2023.10365756

Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this