Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platform

Zhiwei Sun; Tianyu Zhao; Maoqing Ling; Jingang Li; Hao Tian; Weisheng Wang; Yuanlei Zhang; Jie Zhang; Yinchao Zhao; Ivona Z. Mitrovic; Harm van Zalinge; Kain Lu Low; Sen Huang; Wen Liu

doi:10.1063/5.0281033

Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p⁺⁺-GaN/p-GaN/AlGaN/GaN platform

Zhiwei Sun
, Tianyu Zhao
, Maoqing Ling
, Jingang Li
, Hao Tian
, Weisheng Wang
, Yuanlei Zhang
, Jie Zhang
, Yinchao Zhao
, Ivona Z. Mitrovic
, Harm van Zalinge
, Kain Lu Low
, Sen Huang
, Wen Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A record-low Ohmic contact resistance is obtained on p⁺⁺-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmosphere demonstrates an ultralow contact resistance (1.67 Ω mm) and the lowest specific contact resistivity (6.48 × 10^-7 Ω cm²) reported so far. The employment of a NiO capping layer on Ni/Ag metal stack has improved the annealing thermal stability and electrical properties.

Original language	English
Article number	083505
Journal	Applied Physics Letters
Volume	127
Issue number	8
DOIs	https://doi.org/10.1063/5.0281033
Publication status	Published - 25 Aug 2025

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title = "Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platform",

abstract = "A record-low Ohmic contact resistance is obtained on p++-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmosphere demonstrates an ultralow contact resistance (1.67 Ω mm) and the lowest specific contact resistivity (6.48 × 10-7 Ω cm2) reported so far. The employment of a NiO capping layer on Ni/Ag metal stack has improved the annealing thermal stability and electrical properties.",

author = "Zhiwei Sun and Tianyu Zhao and Maoqing Ling and Jingang Li and Hao Tian and Weisheng Wang and Yuanlei Zhang and Jie Zhang and Yinchao Zhao and Mitrovic, \{Ivona Z.\} and \{van Zalinge\}, Harm and Low, \{Kain Lu\} and Sen Huang and Wen Liu",

note = "Publisher Copyright: {\textcopyright} 2025 Author(s).",

year = "2025",

month = aug,

day = "25",

doi = "10.1063/5.0281033",

language = "English",

volume = "127",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "8",

}

TY - JOUR

T1 - Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platform

AU - Sun, Zhiwei

AU - Zhao, Tianyu

AU - Ling, Maoqing

AU - Li, Jingang

AU - Tian, Hao

AU - Wang, Weisheng

AU - Zhang, Yuanlei

AU - Zhang, Jie

AU - Zhao, Yinchao

AU - Mitrovic, Ivona Z.

AU - van Zalinge, Harm

AU - Low, Kain Lu

AU - Huang, Sen

AU - Liu, Wen

PY - 2025/8/25

Y1 - 2025/8/25

N2 - A record-low Ohmic contact resistance is obtained on p++-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmosphere demonstrates an ultralow contact resistance (1.67 Ω mm) and the lowest specific contact resistivity (6.48 × 10-7 Ω cm2) reported so far. The employment of a NiO capping layer on Ni/Ag metal stack has improved the annealing thermal stability and electrical properties.

AB - A record-low Ohmic contact resistance is obtained on p++-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmosphere demonstrates an ultralow contact resistance (1.67 Ω mm) and the lowest specific contact resistivity (6.48 × 10-7 Ω cm2) reported so far. The employment of a NiO capping layer on Ni/Ag metal stack has improved the annealing thermal stability and electrical properties.

UR - https://www.scopus.com/pages/publications/105014511817

U2 - 10.1063/5.0281033

DO - 10.1063/5.0281033

M3 - Article

AN - SCOPUS:105014511817

SN - 0003-6951

VL - 127

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083505

ER -

Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p⁺⁺-GaN/p-GaN/AlGaN/GaN platform

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