The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy

X. Huang; X. H. Zhang; Y. G. Zhu; T. Li; L. F. Han; X. J. Shang; H. Q. Ni; Z. C. Niu

doi:10.1016/j.optcom.2009.12.002

The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy

X. Huang
, X. H. Zhang^*
, Y. G. Zhu
, T. Li
, L. F. Han
, X. J. Shang
, H. Q. Ni
, Z. C. Niu

^*Corresponding author for this work

CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III-V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.

Original language	English
Pages (from-to)	1510-1513
Number of pages	4
Journal	Optics Communications
Volume	283
Issue number	7
DOIs	https://doi.org/10.1016/j.optcom.2009.12.002
Publication status	Published - 1 Apr 2010
Externally published	Yes

Keywords

InAs quantum dots
Nonlinear refraction
Reflection Z-scan

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10.1016/j.optcom.2009.12.002

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@article{acf09802d5654511ae28848fa6be2ad9,

title = "The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy",

abstract = "The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III-V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.",

keywords = "InAs quantum dots, Nonlinear refraction, Reflection Z-scan",

author = "X. Huang and Zhang, \{X. H.\} and Zhu, \{Y. G.\} and T. Li and Han, \{L. F.\} and Shang, \{X. J.\} and Ni, \{H. Q.\} and Niu, \{Z. C.\}",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant Nos. 10674131 , 60625405 and 10734060 ).",

year = "2010",

month = apr,

day = "1",

doi = "10.1016/j.optcom.2009.12.002",

language = "English",

volume = "283",

pages = "1510--1513",

journal = "Optics Communications",

issn = "0030-4018",

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TY - JOUR

T1 - The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy

AU - Huang, X.

AU - Zhang, X. H.

AU - Zhu, Y. G.

AU - Li, T.

AU - Han, L. F.

AU - Shang, X. J.

AU - Ni, H. Q.

AU - Niu, Z. C.

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant Nos. 10674131 , 60625405 and 10734060 ).

PY - 2010/4/1

Y1 - 2010/4/1

N2 - The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III-V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.

AB - The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III-V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.

KW - InAs quantum dots

KW - Nonlinear refraction

KW - Reflection Z-scan

UR - https://www.scopus.com/pages/publications/75349084731

U2 - 10.1016/j.optcom.2009.12.002

DO - 10.1016/j.optcom.2009.12.002

M3 - Article

AN - SCOPUS:75349084731

SN - 0030-4018

VL - 283

SP - 1510

EP - 1513

JO - Optics Communications

JF - Optics Communications

IS - 7

ER -

The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy

Abstract

Keywords

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