TY - GEN
T1 - The Impact of AlGaN Barrier on Transient VTH Shifts and VTH Hysteresis in Depletion and Enhancement mode AlGaN/GaN MIS-HEMTs
AU - Lu, Bohan
AU - Cui, Miao
AU - Liu, Wen
N1 - Funding Information:
ACKNOWLEDGMENT This work was supported by the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(18KJB470023), the Key Program Special Fund in XJTLU (KSF-A-05) (KSF-A-12) and the Suzhou Science and Technology program (SYG201728).
Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - The threshold voltage instability in AlGaN/GaN MIS-HEMTs is due to dielectric induced traps. In this paper, DC I-V and fast transient I-V measurements were used to characterize the threshold voltage hysteresis (ΔVTH) and threshold voltage shift (VTH shift). The VTH instability with different etch depths of D-mode devices was systematically studied. The experiment results reveal that ΔVTH increases with thickness of AlGaN barrier layer and decrease with the period of measurement signal, indicating the obviously fast transient VTH hysteresis contributed by AlGaN barrier. Moreover, an obvious VTH shift was observed at different gate voltages and is independent of etch depths of D-mode devices, indicating very slow traps at Al/III-N interface. Those results give important implications to reduce transient VTH instability by improving the quality of AlGaN barrier using AlGaN/GaN MIS-HEMTs, especially for high frequency switching applications.
AB - The threshold voltage instability in AlGaN/GaN MIS-HEMTs is due to dielectric induced traps. In this paper, DC I-V and fast transient I-V measurements were used to characterize the threshold voltage hysteresis (ΔVTH) and threshold voltage shift (VTH shift). The VTH instability with different etch depths of D-mode devices was systematically studied. The experiment results reveal that ΔVTH increases with thickness of AlGaN barrier layer and decrease with the period of measurement signal, indicating the obviously fast transient VTH hysteresis contributed by AlGaN barrier. Moreover, an obvious VTH shift was observed at different gate voltages and is independent of etch depths of D-mode devices, indicating very slow traps at Al/III-N interface. Those results give important implications to reduce transient VTH instability by improving the quality of AlGaN barrier using AlGaN/GaN MIS-HEMTs, especially for high frequency switching applications.
KW - Al O /III-N interface traps
KW - component: AlGaN/GaN MIS-HEMT
KW - threshold voltage hysteresis and barrier layer
UR - https://www.scopus.com/pages/publications/85071485656
U2 - 10.1109/ICICDT.2019.8790906
DO - 10.1109/ICICDT.2019.8790906
M3 - Conference Proceeding
AN - SCOPUS:85071485656
T3 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
BT - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Y2 - 17 June 2019 through 19 June 2019
ER -