The effect of cadmium impurities in the (PVP–TeO2) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs): Exploring its electrophysical parameters

Gholamreza Pirgholi-Givi; Şemsettin Altındal; Mehdi Shahedi Asl; Abbas Sabahi Namini; Javid Farazin; Yashar Azizian-Kalandaragh

doi:10.1016/j.physb.2020.412617

The effect of cadmium impurities in the (PVP–TeO₂) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs): Exploring its electrophysical parameters

Gholamreza Pirgholi-Givi
, Şemsettin Altındal
, Mehdi Shahedi Asl
, Abbas Sabahi Namini
, Javid Farazin
, Yashar Azizian-Kalandaragh^*

^*Corresponding author for this work

University of Mohaghegh Ardebili
Sabalan University of Advanced Technologies
Gazi University
Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Al/p-Si (MS) type SBDs with/without (PVP–TeO₂: Cd) interfacial layer was fabricated in the same conditions to investigate Cd impurities on its electrophysical parameters using I–V and Z-f measurements. Structural and optical properties of the (TeO₂: Cd) nanostructures were characterized using XRD, FE-SEM, EDX, and UV–Vis techniques. The existence of Cd impurities and formation of TeO₂ nanostructures was confirmed by EDX and XRD techniques, respectively. The values of barrier height (Φ_B₀), ideality factor (n), series resistance (R_s) were derived from the I_F-V_F data as 0.65 eV, 5.60, 4.80 kΩ for MS and 0.54 eV, 4.83, 0.27 kΩ for MPS SBD, respectively. The energy-dependent profile of surface states (N_ss) was also extracted from I_F-V_F data by assuming voltage-dependent of BH and n. The existence of impurities in the interlayer leads to a decrease of n, R_s, Φ_B₀, but an increase of leakage current, rectifying ratio (I_F/I_R), and conductivity.

Original language	English
Article number	412617
Journal	Physica B: Condensed Matter
Volume	604
DOIs	https://doi.org/10.1016/j.physb.2020.412617
Publication status	Published - 1 Mar 2021
Externally published	Yes

Keywords

A comparison of Al/p-Si (MS) and Al/(PVP–TeO: Cd)/p-Si (MPS) SBDs
Cd impurities in (PVP–TeO) interlayer
Electrical and dielectric characteristics
I–V and C/G-f

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10.1016/j.physb.2020.412617

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title = "The effect of cadmium impurities in the (PVP–TeO2) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs): Exploring its electrophysical parameters",

abstract = "Al/p-Si (MS) type SBDs with/without (PVP–TeO2: Cd) interfacial layer was fabricated in the same conditions to investigate Cd impurities on its electrophysical parameters using I–V and Z-f measurements. Structural and optical properties of the (TeO2: Cd) nanostructures were characterized using XRD, FE-SEM, EDX, and UV–Vis techniques. The existence of Cd impurities and formation of TeO2 nanostructures was confirmed by EDX and XRD techniques, respectively. The values of barrier height (ΦB0), ideality factor (n), series resistance (Rs) were derived from the IF-VF data as 0.65 eV, 5.60, 4.80 kΩ for MS and 0.54 eV, 4.83, 0.27 kΩ for MPS SBD, respectively. The energy-dependent profile of surface states (Nss) was also extracted from IF-VF data by assuming voltage-dependent of BH and n. The existence of impurities in the interlayer leads to a decrease of n, Rs, ΦB0, but an increase of leakage current, rectifying ratio (IF/IR), and conductivity.",

keywords = "A comparison of Al/p-Si (MS) and Al/(PVP–TeO: Cd)/p-Si (MPS) SBDs, Cd impurities in (PVP–TeO) interlayer, Electrical and dielectric characteristics, I–V and C/G-f",

author = "Gholamreza Pirgholi-Givi and {\c S}emsettin Altındal and \{Shahedi Asl\}, Mehdi and \{Sabahi Namini\}, Abbas and Javid Farazin and Yashar Azizian-Kalandaragh",

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year = "2021",

month = mar,

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doi = "10.1016/j.physb.2020.412617",

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T1 - The effect of cadmium impurities in the (PVP–TeO2) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs)

T2 - Exploring its electrophysical parameters

AU - Pirgholi-Givi, Gholamreza

AU - Altındal, Şemsettin

AU - Shahedi Asl, Mehdi

AU - Sabahi Namini, Abbas

AU - Farazin, Javid

AU - Azizian-Kalandaragh, Yashar

PY - 2021/3/1

Y1 - 2021/3/1

N2 - Al/p-Si (MS) type SBDs with/without (PVP–TeO2: Cd) interfacial layer was fabricated in the same conditions to investigate Cd impurities on its electrophysical parameters using I–V and Z-f measurements. Structural and optical properties of the (TeO2: Cd) nanostructures were characterized using XRD, FE-SEM, EDX, and UV–Vis techniques. The existence of Cd impurities and formation of TeO2 nanostructures was confirmed by EDX and XRD techniques, respectively. The values of barrier height (ΦB0), ideality factor (n), series resistance (Rs) were derived from the IF-VF data as 0.65 eV, 5.60, 4.80 kΩ for MS and 0.54 eV, 4.83, 0.27 kΩ for MPS SBD, respectively. The energy-dependent profile of surface states (Nss) was also extracted from IF-VF data by assuming voltage-dependent of BH and n. The existence of impurities in the interlayer leads to a decrease of n, Rs, ΦB0, but an increase of leakage current, rectifying ratio (IF/IR), and conductivity.

AB - Al/p-Si (MS) type SBDs with/without (PVP–TeO2: Cd) interfacial layer was fabricated in the same conditions to investigate Cd impurities on its electrophysical parameters using I–V and Z-f measurements. Structural and optical properties of the (TeO2: Cd) nanostructures were characterized using XRD, FE-SEM, EDX, and UV–Vis techniques. The existence of Cd impurities and formation of TeO2 nanostructures was confirmed by EDX and XRD techniques, respectively. The values of barrier height (ΦB0), ideality factor (n), series resistance (Rs) were derived from the IF-VF data as 0.65 eV, 5.60, 4.80 kΩ for MS and 0.54 eV, 4.83, 0.27 kΩ for MPS SBD, respectively. The energy-dependent profile of surface states (Nss) was also extracted from IF-VF data by assuming voltage-dependent of BH and n. The existence of impurities in the interlayer leads to a decrease of n, Rs, ΦB0, but an increase of leakage current, rectifying ratio (IF/IR), and conductivity.

KW - A comparison of Al/p-Si (MS) and Al/(PVP–TeO: Cd)/p-Si (MPS) SBDs

KW - Cd impurities in (PVP–TeO) interlayer

KW - Electrical and dielectric characteristics

KW - I–V and C/G-f

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DO - 10.1016/j.physb.2020.412617

M3 - Article

AN - SCOPUS:85097477439

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JO - Physica B: Condensed Matter

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M1 - 412617

ER -

The effect of cadmium impurities in the (PVP–TeO₂) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs): Exploring its electrophysical parameters

Abstract

Keywords

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