The design and simulation of p-type Si/SiGe Terahertz quantum cascade lasers

Qiuyu Chen; Jingjin Wu; Zhou Fang; Ce Zhou Zhao

doi:10.1016/j.optlastec.2013.09.029

The design and simulation of p-type Si/SiGe Terahertz quantum cascade lasers

Qiuyu Chen, Jingjin Wu, Zhou Fang, Ce Zhou Zhao^*

^*Corresponding author for this work

School of Advanced Technology

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

To prolong upper state lifetime in p-type Si/Si_1-xGe_x Terahertz quantum cascade lasers, a new active region is designed in this work. Using 6×6 k·p theory, the eigenvalues and wavefunctions of heavy holes and light holes are firstly calculated in a single SiGe quantum well. The design in the active region of this THz Si/Si_1-xGe_x quantum cascade lasers is then investigated. This work presents a SiGe quantum cascade laser with about 6.84 THz emission in the diagonal transition. The calculations show that about 32 ps of the upper state lifetime and about 9 cm^-1 of optical gain are obtained, which are enhanced when compared to previous designs.

Original language	English
Pages (from-to)	104-109
Number of pages	6
Journal	Optics and Laser Technology
Volume	57
DOIs	https://doi.org/10.1016/j.optlastec.2013.09.029
Publication status	Published - 2014

Keywords

Diagonal transition
Nonradiative scattering time
THz SiGe QCL

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10.1016/j.optlastec.2013.09.029

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title = "The design and simulation of p-type Si/SiGe Terahertz quantum cascade lasers",

abstract = "To prolong upper state lifetime in p-type Si/Si1-xGex Terahertz quantum cascade lasers, a new active region is designed in this work. Using 6×6 k·p theory, the eigenvalues and wavefunctions of heavy holes and light holes are firstly calculated in a single SiGe quantum well. The design in the active region of this THz Si/Si1-xGex quantum cascade lasers is then investigated. This work presents a SiGe quantum cascade laser with about 6.84 THz emission in the diagonal transition. The calculations show that about 32 ps of the upper state lifetime and about 9 cm-1 of optical gain are obtained, which are enhanced when compared to previous designs.",

keywords = "Diagonal transition, Nonradiative scattering time, THz SiGe QCL",

author = "Qiuyu Chen and Jingjin Wu and Zhou Fang and Zhao, \{Ce Zhou\}",

year = "2014",

doi = "10.1016/j.optlastec.2013.09.029",

language = "English",

volume = "57",

pages = "104--109",

journal = "Optics and Laser Technology",

issn = "0030-3992",

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TY - JOUR

T1 - The design and simulation of p-type Si/SiGe Terahertz quantum cascade lasers

AU - Chen, Qiuyu

AU - Wu, Jingjin

AU - Fang, Zhou

AU - Zhao, Ce Zhou

PY - 2014

Y1 - 2014

N2 - To prolong upper state lifetime in p-type Si/Si1-xGex Terahertz quantum cascade lasers, a new active region is designed in this work. Using 6×6 k·p theory, the eigenvalues and wavefunctions of heavy holes and light holes are firstly calculated in a single SiGe quantum well. The design in the active region of this THz Si/Si1-xGex quantum cascade lasers is then investigated. This work presents a SiGe quantum cascade laser with about 6.84 THz emission in the diagonal transition. The calculations show that about 32 ps of the upper state lifetime and about 9 cm-1 of optical gain are obtained, which are enhanced when compared to previous designs.

AB - To prolong upper state lifetime in p-type Si/Si1-xGex Terahertz quantum cascade lasers, a new active region is designed in this work. Using 6×6 k·p theory, the eigenvalues and wavefunctions of heavy holes and light holes are firstly calculated in a single SiGe quantum well. The design in the active region of this THz Si/Si1-xGex quantum cascade lasers is then investigated. This work presents a SiGe quantum cascade laser with about 6.84 THz emission in the diagonal transition. The calculations show that about 32 ps of the upper state lifetime and about 9 cm-1 of optical gain are obtained, which are enhanced when compared to previous designs.

KW - Diagonal transition

KW - Nonradiative scattering time

KW - THz SiGe QCL

UR - https://www.scopus.com/pages/publications/84887092889

U2 - 10.1016/j.optlastec.2013.09.029

DO - 10.1016/j.optlastec.2013.09.029

M3 - Article

AN - SCOPUS:84887092889

SN - 0030-3992

VL - 57

SP - 104

EP - 109

JO - Optics and Laser Technology

JF - Optics and Laser Technology

ER -

The design and simulation of p-type Si/SiGe Terahertz quantum cascade lasers

Abstract

Keywords

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