Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells

Md Soyaeb Hasan; Md Sherajul Islam; Md Rafiqul Islam; Ibrahim Mustafa Mehedi; Takayuki Makino

doi:10.1007/s10825-017-1115-3

Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells

Md Soyaeb Hasan, Md Sherajul Islam^*, Md Rafiqul Islam, Ibrahim Mustafa Mehedi, Takayuki Makino

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This paper elucidates the details of exciton localization dynamics in InGaN/GaN and GaN/AlInN quantum wells (QWs) using Monte Carlo simulation for a wide range of temperatures (10–300 K). We find that the phonon-induced variation of exciton lifetimes has remarkable effects on the photoluminescence (PL) peak position and the line-width. The red-shift of PL peak position at high temperature is clarified. The combined effects of phonon-induced radiative lifetime of excitons and the band-gap shrinkage at high temperature show the most reasonable agreement with the experimentally observed red-shift of the PL peak position. We have also quantitatively explained the temperature dependence of the W-shaped line-width in both InGaN/GaN and GaN/AlInN QWs. These results are highly significant to understand the emission properties of III-nitride QWs optoelectronic devices.

Original language	English
Pages (from-to)	373-381
Number of pages	9
Journal	Journal of Computational Electronics
Volume	17
Issue number	1
DOIs	https://doi.org/10.1007/s10825-017-1115-3
Publication status	Published - 1 Mar 2018
Externally published	Yes

Keywords

Exciton localization
InGaN/GaN
Photoluminescence
Quantum well

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@article{b72013a3ae784b36be34238073fc7d49,

title = "Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells",

abstract = "This paper elucidates the details of exciton localization dynamics in InGaN/GaN and GaN/AlInN quantum wells (QWs) using Monte Carlo simulation for a wide range of temperatures (10–300 K). We find that the phonon-induced variation of exciton lifetimes has remarkable effects on the photoluminescence (PL) peak position and the line-width. The red-shift of PL peak position at high temperature is clarified. The combined effects of phonon-induced radiative lifetime of excitons and the band-gap shrinkage at high temperature show the most reasonable agreement with the experimentally observed red-shift of the PL peak position. We have also quantitatively explained the temperature dependence of the W-shaped line-width in both InGaN/GaN and GaN/AlInN QWs. These results are highly significant to understand the emission properties of III-nitride QWs optoelectronic devices.",

keywords = "Exciton localization, InGaN/GaN, Photoluminescence, Quantum well",

author = "Hasan, \{Md Soyaeb\} and Islam, \{Md Sherajul\} and Islam, \{Md Rafiqul\} and Mehedi, \{Ibrahim Mustafa\} and Takayuki Makino",

note = "Publisher Copyright: {\textcopyright} 2017, Springer Science+Business Media, LLC, part of Springer Nature.",

year = "2018",

month = mar,

day = "1",

doi = "10.1007/s10825-017-1115-3",

language = "English",

volume = "17",

pages = "373--381",

journal = "Journal of Computational Electronics",

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TY - JOUR

T1 - Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells

AU - Hasan, Md Soyaeb

AU - Islam, Md Sherajul

AU - Islam, Md Rafiqul

AU - Mehedi, Ibrahim Mustafa

AU - Makino, Takayuki

PY - 2018/3/1

Y1 - 2018/3/1

N2 - This paper elucidates the details of exciton localization dynamics in InGaN/GaN and GaN/AlInN quantum wells (QWs) using Monte Carlo simulation for a wide range of temperatures (10–300 K). We find that the phonon-induced variation of exciton lifetimes has remarkable effects on the photoluminescence (PL) peak position and the line-width. The red-shift of PL peak position at high temperature is clarified. The combined effects of phonon-induced radiative lifetime of excitons and the band-gap shrinkage at high temperature show the most reasonable agreement with the experimentally observed red-shift of the PL peak position. We have also quantitatively explained the temperature dependence of the W-shaped line-width in both InGaN/GaN and GaN/AlInN QWs. These results are highly significant to understand the emission properties of III-nitride QWs optoelectronic devices.

AB - This paper elucidates the details of exciton localization dynamics in InGaN/GaN and GaN/AlInN quantum wells (QWs) using Monte Carlo simulation for a wide range of temperatures (10–300 K). We find that the phonon-induced variation of exciton lifetimes has remarkable effects on the photoluminescence (PL) peak position and the line-width. The red-shift of PL peak position at high temperature is clarified. The combined effects of phonon-induced radiative lifetime of excitons and the band-gap shrinkage at high temperature show the most reasonable agreement with the experimentally observed red-shift of the PL peak position. We have also quantitatively explained the temperature dependence of the W-shaped line-width in both InGaN/GaN and GaN/AlInN QWs. These results are highly significant to understand the emission properties of III-nitride QWs optoelectronic devices.

KW - Exciton localization

KW - InGaN/GaN

KW - Photoluminescence

KW - Quantum well

UR - https://www.scopus.com/pages/publications/85038124860

U2 - 10.1007/s10825-017-1115-3

DO - 10.1007/s10825-017-1115-3

M3 - Article

AN - SCOPUS:85038124860

SN - 1569-8025

VL - 17

SP - 373

EP - 381

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

IS - 1

ER -

Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells

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Keywords

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