Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

T. Li; X. H. Zhang; Y. G. Zhu; X. Huang; L. F. Han; X. J. Shang; H. Q. Ni; Z. C. Niu

doi:10.1016/j.physe.2009.12.050

Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

T. Li
, X. H. Zhang^*
, Y. G. Zhu
, X. Huang
, L. F. Han
, X. J. Shang
, H. Q. Ni
, Z. C. Niu

^*Corresponding author for this work

CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

Original language	English
Pages (from-to)	1597-1600
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	42
Issue number	5
DOIs	https://doi.org/10.1016/j.physe.2009.12.050
Publication status	Published - Mar 2010
Externally published	Yes

Keywords

DP mechanism
Hole spin relaxation
Ultrathin InAs monolayer

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10.1016/j.physe.2009.12.050

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title = "Temperature dependence of hole spin relaxation in ultrathin InAs monolayers",

abstract = "The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.",

keywords = "DP mechanism, Hole spin relaxation, Ultrathin InAs monolayer",

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year = "2010",

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doi = "10.1016/j.physe.2009.12.050",

language = "English",

volume = "42",

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TY - JOUR

T1 - Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

AU - Li, T.

AU - Zhang, X. H.

AU - Zhu, Y. G.

AU - Huang, X.

AU - Han, L. F.

AU - Shang, X. J.

AU - Ni, H. Q.

AU - Niu, Z. C.

PY - 2010/3

Y1 - 2010/3

N2 - The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

AB - The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

KW - DP mechanism

KW - Hole spin relaxation

KW - Ultrathin InAs monolayer

UR - https://www.scopus.com/pages/publications/77349083453

U2 - 10.1016/j.physe.2009.12.050

DO - 10.1016/j.physe.2009.12.050

M3 - Article

AN - SCOPUS:77349083453

SN - 1386-9477

VL - 42

SP - 1597

EP - 1600

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 5

ER -

Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

Abstract

Keywords

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