TY - GEN
T1 - TCAD Simulation Analysis on Gate Structure and Trap Effect of GaN-Based Junctionless FinFETs
AU - Jiang, Yizhou
AU - Qu, Zifeng
AU - Zhang, Yichi
AU - Liu, Tianran
AU - Wen, Huiqing
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - In this paper, the superiority of the triple-gate structure, the junctionless structure, and the overlapped-gate structure is successively confirmed by comparative simulations using Silvaco TCAD. Analyze and deduce the correspondence between each simulation parameter and the performance of the device by comparing the transfer characteristics and the output characteristics and other parameters. The results show that the fin structure enables enhanced gate control; the junctionless FinFET has an advantage over conventional FinFETs due to its insensitivity to the trap effect; and the overlapped-gate can significantly suppress the trap effect. In the last part of the article, we simulate the key parameters of junctionless FinFETs, and we infer that they will be very promising in the future with the miniaturization trend, as they have more advantages at smaller sizes.
AB - In this paper, the superiority of the triple-gate structure, the junctionless structure, and the overlapped-gate structure is successively confirmed by comparative simulations using Silvaco TCAD. Analyze and deduce the correspondence between each simulation parameter and the performance of the device by comparing the transfer characteristics and the output characteristics and other parameters. The results show that the fin structure enables enhanced gate control; the junctionless FinFET has an advantage over conventional FinFETs due to its insensitivity to the trap effect; and the overlapped-gate can significantly suppress the trap effect. In the last part of the article, we simulate the key parameters of junctionless FinFETs, and we infer that they will be very promising in the future with the miniaturization trend, as they have more advantages at smaller sizes.
UR - https://www.scopus.com/pages/publications/85184666227
U2 - 10.1109/SSLChinaIFWS60785.2023.10399747
DO - 10.1109/SSLChinaIFWS60785.2023.10399747
M3 - Conference Proceeding
AN - SCOPUS:85184666227
T3 - 2023 20th China International Forum on Solid State Lighting and 2023 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023
SP - 191
EP - 195
BT - 2023 20th China International Forum on Solid State Lighting and 2023 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023
Y2 - 27 November 2023 through 30 November 2023
ER -