Synaptic transistors based on transparent oxide for neural image recognition

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

1 Citation (Scopus)

Abstract

Artificial synaptic devices are the critical component for large-scale neuromorphic computing, which surpasses the limitations of von Neumann's structure. Recently the emerging electrolytic gated transistor (EGT) has proven to be a promising neuromorphic application due to the conductance can be updated by the gate voltage stimulation. This paper presents a new low-temperature solution-based oxide thin film transistor, which uses an ion-doped dielectric layer. The suitable ion doping concentration is obtained by the synaptic electrical characteristic. The synaptic transistor also has a low-noise linear conductance update and a relatively high Gmax/Gmin ratio.

Original languageEnglish
Title of host publication2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665437455
DOIs
Publication statusPublished - 1 Sept 2021
Event2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021 - Caen, France
Duration: 1 Sept 20213 Sept 2021

Publication series

Name2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021

Conference

Conference2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021
Country/TerritoryFrance
CityCaen
Period1/09/213/09/21

Keywords

  • MNIST
  • image recognition
  • neural computing
  • solution-processed transistor
  • synaptic device

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