Substrate Coupling Considerations for Monolithic Integration of High-Voltage Power Transistors with Low-Voltage Devices and Circuits in GaN-on-Si Technology

Rui Yao; Miao Cui; Zhao Wang; Sang Lam; Stephen Taylor

Substrate Coupling Considerations for Monolithic Integration of High-Voltage Power Transistors with Low-Voltage Devices and Circuits in GaN-on-Si Technology

Rui Yao
, Miao Cui
, Zhao Wang
, Sang Lam^*
, Stephen Taylor

^*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Original language	English
Title of host publication	The 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2025)
Publication status	Published - 15 Aug 2025

Cite this

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title = "Substrate Coupling Considerations for Monolithic Integration of High-Voltage Power Transistors with Low-Voltage Devices and Circuits in GaN-on-Si Technology",

author = "Rui Yao and Miao Cui and Zhao Wang and Sang Lam and Stephen Taylor",

year = "2025",

month = aug,

day = "15",

language = "English",

booktitle = "The 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2025)",

}

Substrate Coupling Considerations for Monolithic Integration of High-Voltage Power Transistors with Low-Voltage Devices and Circuits in GaN-on-Si Technology. / Yao, Rui ; Cui, Miao ; Wang, Zhao et al.
The 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2025). 2025.

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Substrate Coupling Considerations for Monolithic Integration of High-Voltage Power Transistors with Low-Voltage Devices and Circuits in GaN-on-Si Technology

AU - Yao, Rui

AU - Cui, Miao

AU - Wang, Zhao

AU - Lam, Sang

AU - Taylor, Stephen

PY - 2025/8/15

Y1 - 2025/8/15

M3 - Conference Proceeding

BT - The 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2025)

ER -