@inproceedings{2e6c1555c3bd48369dcd4234982cbbce,
title = "Strain status in Fe- and Si- doped GaN epilayers grown on sapphire",
abstract = "The effect of Fe doping on a series of Fe-doped GaN epilayers with difference doping concentrations were studied by Raman spectroscopy with comparison to Si-doped GaN samples. Compressive strain in Fe-dope GaN tend to relax.",
author = "Zheng, \{C. C.\} and Ning, \{J. Q.\} and Wang, \{J. F.\} and K. Xu and Zhao, \{D. G.\} and Xu, \{S. J.\}",
note = "Publisher Copyright: {\textcopyright} OSA 2015.; Optoelectronic Devices and Integration, OEDI 2015 ; Conference date: 16-06-2015 Through 19-06-2015",
year = "2015",
doi = "10.1364/OEDI.2015.JW3A.47",
language = "English",
isbn = "9781943580019",
series = "Optoelectronic Devices and Integration, OEDI 2015",
publisher = "Optical Society of America (OSA)",
booktitle = "Optoelectronic Devices and Integration, OEDI 2015",
}