Stability Analysis of Monolithic GaN MIS-HEMT Comparator with Device PBTI and Circuit Stress Tests

In this paper, based on GaN MIS-HEMT bias temperature instability (BTI) tests, we demonstrate the circuit-level stability of the comparator circuit with the stress tests. The circuit topology of the comparator is analyzed to identify the critical device of the circuit whose threshold voltage affects the circuit performance significantly. The positive bias temperature instability (PBTI) is applied to this critical device in the comparator, showing a maximum threshold voltage shift (ΔVth) of 0.311 V at 200 °C for 4.6 ×10 s. The comparator circuit stress test is lasted for 10 s and shows a stable performance. It reveals the potential of the stress test in GaN integrated circuit to realize the circuit-level stability analysis.