Solution processed metal oxide in emerging electronic devices

Chun Zhao; Ce Zhou Zhao; Tian Shi Zhao

doi:10.1109/ASICON47005.2019.8983521

Solution processed metal oxide in emerging electronic devices

Chun Zhao
, Ce Zhou Zhao^*
, Tian Shi Zhao

^*Corresponding author for this work

Department of Electrical and Electronic Engineering

University of Liverpool
Xi'an Jiaotong-Liverpool University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

Recently, solution processed metal oxide (MO) attracts wide interests due to the advantages including low-cost fabrication, procedure simplicity and vacuum-free technique. Within the paper, the synthesis mechanism of metal oxide deposited through solution process is firstly briefly introduced. Then the recent advances and progress on n-type solution processed MO semiconductors as well as the solution processed MO gate dielectrics have been reviewed for thin-film transistors.

Original language	English
Title of host publication	Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019
Editors	Fan Ye, Ting-Ao Tang
Publisher	IEEE Computer Society
ISBN (Electronic)	9781728107356
DOIs	https://doi.org/10.1109/ASICON47005.2019.8983521
Publication status	Published - Oct 2019
Event	13th IEEE International Conference on ASIC, ASICON 2019 - Chongqing, China Duration: 29 Oct 2019 → 1 Nov 2019

Publication series

Name	Proceedings of International Conference on ASIC
ISSN (Print)	2162-7541
ISSN (Electronic)	2162-755X

Conference

Conference	13th IEEE International Conference on ASIC, ASICON 2019
Country/Territory	China
City	Chongqing
Period	29/10/19 → 1/11/19

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10.1109/ASICON47005.2019.8983521

Cite this

@inproceedings{9cbf6777037a466fba0f6c1e19e34323,

title = "Solution processed metal oxide in emerging electronic devices",

abstract = "Recently, solution processed metal oxide (MO) attracts wide interests due to the advantages including low-cost fabrication, procedure simplicity and vacuum-free technique. Within the paper, the synthesis mechanism of metal oxide deposited through solution process is firstly briefly introduced. Then the recent advances and progress on n-type solution processed MO semiconductors as well as the solution processed MO gate dielectrics have been reviewed for thin-film transistors.",

author = "Chun Zhao and Zhao, \{Ce Zhou\} and Zhao, \{Tian Shi\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 13th IEEE International Conference on ASIC, ASICON 2019 ; Conference date: 29-10-2019 Through 01-11-2019",

year = "2019",

month = oct,

doi = "10.1109/ASICON47005.2019.8983521",

language = "English",

series = "Proceedings of International Conference on ASIC",

publisher = "IEEE Computer Society",

editor = "Fan Ye and Ting-Ao Tang",

booktitle = "Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019",

}

Zhao, C, Zhao, CZ & Zhao, TS 2019, Solution processed metal oxide in emerging electronic devices. in F Ye & T-A Tang (eds), Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019., 8983521, Proceedings of International Conference on ASIC, IEEE Computer Society, 13th IEEE International Conference on ASIC, ASICON 2019, Chongqing, China, 29/10/19. https://doi.org/10.1109/ASICON47005.2019.8983521

Solution processed metal oxide in emerging electronic devices. / Zhao, Chun; Zhao, Ce Zhou; Zhao, Tian Shi.
Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019. ed. / Fan Ye; Ting-Ao Tang. IEEE Computer Society, 2019. 8983521 (Proceedings of International Conference on ASIC).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

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AU - Zhao, Chun

AU - Zhao, Ce Zhou

AU - Zhao, Tian Shi

PY - 2019/10

Y1 - 2019/10

N2 - Recently, solution processed metal oxide (MO) attracts wide interests due to the advantages including low-cost fabrication, procedure simplicity and vacuum-free technique. Within the paper, the synthesis mechanism of metal oxide deposited through solution process is firstly briefly introduced. Then the recent advances and progress on n-type solution processed MO semiconductors as well as the solution processed MO gate dielectrics have been reviewed for thin-film transistors.

AB - Recently, solution processed metal oxide (MO) attracts wide interests due to the advantages including low-cost fabrication, procedure simplicity and vacuum-free technique. Within the paper, the synthesis mechanism of metal oxide deposited through solution process is firstly briefly introduced. Then the recent advances and progress on n-type solution processed MO semiconductors as well as the solution processed MO gate dielectrics have been reviewed for thin-film transistors.

UR - https://www.scopus.com/pages/publications/85082581726

U2 - 10.1109/ASICON47005.2019.8983521

DO - 10.1109/ASICON47005.2019.8983521

M3 - Conference Proceeding

AN - SCOPUS:85082581726

T3 - Proceedings of International Conference on ASIC

BT - Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019

A2 - Ye, Fan

A2 - Tang, Ting-Ao

PB - IEEE Computer Society

T2 - 13th IEEE International Conference on ASIC, ASICON 2019

Y2 - 29 October 2019 through 1 November 2019

ER -

Solution processed metal oxide in emerging electronic devices

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