Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation

T. W. Schroeder; P. F. Ma; A. M. Lam; Y. J. Zheng; J. R. Engstrom

doi:10.1063/1.1408271

Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation

T. W. Schroeder^*
, P. F. Ma
, A. M. Lam
, Y. J. Zheng
, J. R. Engstrom

^*Corresponding author for this work

Cornell University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We present here a low-temperature (T_s<630°C) process for the selective epitaxial growth of Si that employs atomic hydrogen. Modulation of both the substrate temperature and the flux of atomic hydrogen gives alternating growth and suppression/etching cycles, resulting in a significant increase in selectivity. Epitaxial thin-film quality is essentially unaffected, as verified by in situ analysis via low-energy electron diffraction, and ex situ analysis via scanning electron and atomic-force microscopy.

Original language	English
Pages (from-to)	2181-2183
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	14
DOIs	https://doi.org/10.1063/1.1408271
Publication status	Published - 1 Oct 2001
Externally published	Yes

Access to Document

10.1063/1.1408271

Cite this

@article{e914e3abb7964b5ba45d3cc70b5e663a,

title = "Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation",

abstract = "We present here a low-temperature (Ts<630°C) process for the selective epitaxial growth of Si that employs atomic hydrogen. Modulation of both the substrate temperature and the flux of atomic hydrogen gives alternating growth and suppression/etching cycles, resulting in a significant increase in selectivity. Epitaxial thin-film quality is essentially unaffected, as verified by in situ analysis via low-energy electron diffraction, and ex situ analysis via scanning electron and atomic-force microscopy.",

author = "Schroeder, \{T. W.\} and Ma, \{P. F.\} and Lam, \{A. M.\} and Zheng, \{Y. J.\} and Engstrom, \{J. R.\}",

year = "2001",

month = oct,

day = "1",

doi = "10.1063/1.1408271",

language = "English",

volume = "79",

pages = "2181--2183",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "14",

}

TY - JOUR

T1 - Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation

AU - Schroeder, T. W.

AU - Ma, P. F.

AU - Lam, A. M.

AU - Zheng, Y. J.

AU - Engstrom, J. R.

PY - 2001/10/1

Y1 - 2001/10/1

N2 - We present here a low-temperature (Ts<630°C) process for the selective epitaxial growth of Si that employs atomic hydrogen. Modulation of both the substrate temperature and the flux of atomic hydrogen gives alternating growth and suppression/etching cycles, resulting in a significant increase in selectivity. Epitaxial thin-film quality is essentially unaffected, as verified by in situ analysis via low-energy electron diffraction, and ex situ analysis via scanning electron and atomic-force microscopy.

AB - We present here a low-temperature (Ts<630°C) process for the selective epitaxial growth of Si that employs atomic hydrogen. Modulation of both the substrate temperature and the flux of atomic hydrogen gives alternating growth and suppression/etching cycles, resulting in a significant increase in selectivity. Epitaxial thin-film quality is essentially unaffected, as verified by in situ analysis via low-energy electron diffraction, and ex situ analysis via scanning electron and atomic-force microscopy.

UR - https://www.scopus.com/pages/publications/0035475419

U2 - 10.1063/1.1408271

DO - 10.1063/1.1408271

M3 - Article

AN - SCOPUS:0035475419

SN - 0003-6951

VL - 79

SP - 2181

EP - 2183

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this