Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation

T. W. Schroeder; P. F. Ma; A. M. Lam; Y. J. Zheng; J. R. Engstrom

doi:10.1063/1.1408271

Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation

T. W. Schroeder^*, P. F. Ma, A. M. Lam, Y. J. Zheng, J. R. Engstrom

^*Corresponding author for this work

Cornell University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We present here a low-temperature (T_s<630°C) process for the selective epitaxial growth of Si that employs atomic hydrogen. Modulation of both the substrate temperature and the flux of atomic hydrogen gives alternating growth and suppression/etching cycles, resulting in a significant increase in selectivity. Epitaxial thin-film quality is essentially unaffected, as verified by in situ analysis via low-energy electron diffraction, and ex situ analysis via scanning electron and atomic-force microscopy.

Original language	English
Pages (from-to)	2181-2183
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	14
DOIs	https://doi.org/10.1063/1.1408271
Publication status	Published - 1 Oct 2001
Externally published	Yes

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abstract = "We present here a low-temperature (Ts<630°C) process for the selective epitaxial growth of Si that employs atomic hydrogen. Modulation of both the substrate temperature and the flux of atomic hydrogen gives alternating growth and suppression/etching cycles, resulting in a significant increase in selectivity. Epitaxial thin-film quality is essentially unaffected, as verified by in situ analysis via low-energy electron diffraction, and ex situ analysis via scanning electron and atomic-force microscopy.",

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AU - Schroeder, T. W.

AU - Ma, P. F.

AU - Lam, A. M.

AU - Zheng, Y. J.

AU - Engstrom, J. R.

PY - 2001/10/1

Y1 - 2001/10/1

N2 - We present here a low-temperature (Ts<630°C) process for the selective epitaxial growth of Si that employs atomic hydrogen. Modulation of both the substrate temperature and the flux of atomic hydrogen gives alternating growth and suppression/etching cycles, resulting in a significant increase in selectivity. Epitaxial thin-film quality is essentially unaffected, as verified by in situ analysis via low-energy electron diffraction, and ex situ analysis via scanning electron and atomic-force microscopy.

AB - We present here a low-temperature (Ts<630°C) process for the selective epitaxial growth of Si that employs atomic hydrogen. Modulation of both the substrate temperature and the flux of atomic hydrogen gives alternating growth and suppression/etching cycles, resulting in a significant increase in selectivity. Epitaxial thin-film quality is essentially unaffected, as verified by in situ analysis via low-energy electron diffraction, and ex situ analysis via scanning electron and atomic-force microscopy.

UR - https://www.scopus.com/pages/publications/0035475419

U2 - 10.1063/1.1408271

DO - 10.1063/1.1408271

M3 - Article

AN - SCOPUS:0035475419

SN - 0003-6951

VL - 79

SP - 2181

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation

Abstract

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