@inproceedings{561fe5646dcd44c29373435d10af0c07,
title = "Robust electrical characteristics of multiple-layer InAs/GaAs quantum-dot diodes under gamma irradiation",
abstract = "To conclude, the InAs/GaAs QD devices display radiation-tolerant DC characteristics despite high total dose of gamma radiation. No permanent ionising damage to the III-V compound semiconductor devices has been observed. The off-state leakage current is not worsened even when the device is continuously irradiated by gamma radiation. The results show great promise of InAs/GaAs QD structure for realization of IR photodetectors with low noise floor and high reliability in radiation environments.",
keywords = "Current measurement, Electrodes, Gold, Leakage currents, Radiation effects, Time measurement",
author = "Yifei Mu and S. Lam and Zhao, \{C. Z.\} and N. Babazadeh and Hogg, \{R. A.\} and K. Nishi and K. Takemasa and M. Sugawara",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",
year = "2015",
month = aug,
day = "3",
doi = "10.1109/DRC.2015.7175591",
language = "English",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "133--134",
booktitle = "73rd Annual Device Research Conference, DRC 2015",
}