Review of SiC Power Devices for Electrical Power Systems: Characteristics, Protection, and Application

Xue Wang; Huiqing Wen; Yinxiao Zhu

doi:10.1109/ACPEE51499.2021.9437108

Review of SiC Power Devices for Electrical Power Systems: Characteristics, Protection, and Application

Xue Wang
, Huiqing Wen
, Yinxiao Zhu

Academy of JITRI

Xi'an Jiaotong-Liverpool University
University of Liverpool

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

19 Citations (Scopus)

Abstract

Wide-bandgap devices such as Gallium-Nitride (GaN) power devices, Gallium-Arsenide (GaAs) power devices, and Silicon-Carbide (SiC) power devices have obvious advantages such as the switching speed, operation temperature, and power density compared with the counterpart Silicon devices. Among the wide-bandgap power devices mentioned above, the SiC power devices have their particular characteristics, such as high switching speed, lower switching loss, and excellent thermal performances. In this paper, a review is given for the SiC power devices in terms of the development and optimization, short circuit characteristics, and different protection methods according to their short circuit characteristics of the devices.

Original language	English
Title of host publication	Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021
Editors	Tek-Tjing Lie, Youbo Liu
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	531-536
Number of pages	6
ISBN (Electronic)	9781728191591
DOIs	https://doi.org/10.1109/ACPEE51499.2021.9437108
Publication status	Published - Apr 2021
Event	6th Asia Conference on Power and Electrical Engineering, ACPEE 2021 - Chongqing, China Duration: 8 Apr 2021 → 11 Apr 2021

Publication series

Name	Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021

Conference

Conference	6th Asia Conference on Power and Electrical Engineering, ACPEE 2021
Country/Territory	China
City	Chongqing
Period	8/04/21 → 11/04/21

Keywords

SiC power devices
protect circuit
short circuit characteristics

Access to Document

10.1109/ACPEE51499.2021.9437108

Cite this

Wang, X., Wen, H., & Zhu, Y. (2021). Review of SiC Power Devices for Electrical Power Systems: Characteristics, Protection, and Application. In T.-T. Lie, & Y. Liu (Eds.), Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021 (pp. 531-536). Article 9437108 (Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ACPEE51499.2021.9437108

Wang, Xue ; Wen, Huiqing ; Zhu, Yinxiao. / Review of SiC Power Devices for Electrical Power Systems : Characteristics, Protection, and Application. Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021. editor / Tek-Tjing Lie ; Youbo Liu. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 531-536 (Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021).

@inproceedings{4f972ec9600c411382a3cdd07d68272b,

title = "Review of SiC Power Devices for Electrical Power Systems: Characteristics, Protection, and Application",

abstract = "Wide-bandgap devices such as Gallium-Nitride (GaN) power devices, Gallium-Arsenide (GaAs) power devices, and Silicon-Carbide (SiC) power devices have obvious advantages such as the switching speed, operation temperature, and power density compared with the counterpart Silicon devices. Among the wide-bandgap power devices mentioned above, the SiC power devices have their particular characteristics, such as high switching speed, lower switching loss, and excellent thermal performances. In this paper, a review is given for the SiC power devices in terms of the development and optimization, short circuit characteristics, and different protection methods according to their short circuit characteristics of the devices.",

keywords = "SiC power devices, protect circuit, short circuit characteristics",

author = "Xue Wang and Huiqing Wen and Yinxiao Zhu",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021 ; Conference date: 08-04-2021 Through 11-04-2021",

year = "2021",

month = apr,

doi = "10.1109/ACPEE51499.2021.9437108",

language = "English",

series = "Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "531--536",

editor = "Tek-Tjing Lie and Youbo Liu",

booktitle = "Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021",

}

Wang, X, Wen, H & Zhu, Y 2021, Review of SiC Power Devices for Electrical Power Systems: Characteristics, Protection, and Application. in T-T Lie & Y Liu (eds), Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021., 9437108, Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021, Institute of Electrical and Electronics Engineers Inc., pp. 531-536, 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021, Chongqing, China, 8/04/21. https://doi.org/10.1109/ACPEE51499.2021.9437108

Review of SiC Power Devices for Electrical Power Systems: Characteristics, Protection, and Application. / Wang, Xue; Wen, Huiqing; Zhu, Yinxiao.
Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021. ed. / Tek-Tjing Lie; Youbo Liu. Institute of Electrical and Electronics Engineers Inc., 2021. p. 531-536 9437108 (Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Review of SiC Power Devices for Electrical Power Systems

T2 - 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021

AU - Wang, Xue

AU - Wen, Huiqing

AU - Zhu, Yinxiao

PY - 2021/4

Y1 - 2021/4

N2 - Wide-bandgap devices such as Gallium-Nitride (GaN) power devices, Gallium-Arsenide (GaAs) power devices, and Silicon-Carbide (SiC) power devices have obvious advantages such as the switching speed, operation temperature, and power density compared with the counterpart Silicon devices. Among the wide-bandgap power devices mentioned above, the SiC power devices have their particular characteristics, such as high switching speed, lower switching loss, and excellent thermal performances. In this paper, a review is given for the SiC power devices in terms of the development and optimization, short circuit characteristics, and different protection methods according to their short circuit characteristics of the devices.

AB - Wide-bandgap devices such as Gallium-Nitride (GaN) power devices, Gallium-Arsenide (GaAs) power devices, and Silicon-Carbide (SiC) power devices have obvious advantages such as the switching speed, operation temperature, and power density compared with the counterpart Silicon devices. Among the wide-bandgap power devices mentioned above, the SiC power devices have their particular characteristics, such as high switching speed, lower switching loss, and excellent thermal performances. In this paper, a review is given for the SiC power devices in terms of the development and optimization, short circuit characteristics, and different protection methods according to their short circuit characteristics of the devices.

KW - SiC power devices

KW - protect circuit

KW - short circuit characteristics

UR - https://www.scopus.com/pages/publications/85107470596

U2 - 10.1109/ACPEE51499.2021.9437108

DO - 10.1109/ACPEE51499.2021.9437108

M3 - Conference Proceeding

AN - SCOPUS:85107470596

T3 - Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021

SP - 531

EP - 536

BT - Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021

A2 - Lie, Tek-Tjing

A2 - Liu, Youbo

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 8 April 2021 through 11 April 2021

ER -

Wang X, Wen H, Zhu Y. Review of SiC Power Devices for Electrical Power Systems: Characteristics, Protection, and Application. In Lie TT, Liu Y, editors, Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 531-536. 9437108. (Proceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021). doi: 10.1109/ACPEE51499.2021.9437108

Review of SiC Power Devices for Electrical Power Systems: Characteristics, Protection, and Application

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