Plasma-Enhanced Combustion-Processed Al Gate Oxide for in Thin Film Transistors

Q. H. Liu; C. Zhao; C. Z. Zhao; I. Z. Mitrovic; S. Hall; W. Y. Xu; L. Yang; E. G. Lim; Q. N. Wang; Y. L. Wei; Y. X. Cao

doi:10.1109/ICICDT.2019.8790939

Plasma-Enhanced Combustion-Processed Al Gate Oxide for in Thin Film Transistors

Q. H. Liu
, C. Zhao
, C. Z. Zhao
, I. Z. Mitrovic
, S. Hall
, W. Y. Xu
, L. Yang
, E. G. Lim
, Q. N. Wang
, Y. L. Wei
, Y. X. Cao

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

In this study, we describe how to obtain high-quality Al dielectric thin films and their implementation in In thin film transistors by combining plasma treatment and combustion process at low temperatures (250 °C). The single layer Al dielectric formed by this technique exhibited a higher areal capacitance and a lower leakage level compared with those of conventional solution-processed Al. The resulting TFTs presented a superior electrical performance at a low operating voltage of 2 V, with a positive threshold voltage of 0.39 V, a subthreshold swing of 0.V/decade, an On/Off ratio of 1.8×10⁴, and a superior mobility of 136 cm² V^-1 s^-1.

Original language	English
Title of host publication	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728118536
DOIs	https://doi.org/10.1109/ICICDT.2019.8790939
Publication status	Published - Jun 2019
Event	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Suzhou, China Duration: 17 Jun 2019 → 19 Jun 2019

Publication series

Name	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

Conference

Conference	17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Country/Territory	China
City	Suzhou
Period	17/06/19 → 19/06/19

Keywords

Low-temperature
Solution-processed
combustion synthesis
environmentally friendly
metal oxide thin-film transistors

Access to Document

10.1109/ICICDT.2019.8790939

Cite this

Liu, Q. H., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Hall, S., Xu, W. Y., Yang, L., Lim, E. G., Wang, Q. N., Wei, Y. L., & Cao, Y. X. (2019). Plasma-Enhanced Combustion-Processed Al Gate Oxide for in Thin Film Transistors. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings Article 8790939 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2019.8790939

Liu, Q. H. ; Zhao, C. ; Zhao, C. Z. et al. / Plasma-Enhanced Combustion-Processed Al Gate Oxide for in Thin Film Transistors. 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

@inproceedings{900d992e26084a36a40a1cafc6c70925,

title = "Plasma-Enhanced Combustion-Processed Al Gate Oxide for in Thin Film Transistors",

abstract = "In this study, we describe how to obtain high-quality Al dielectric thin films and their implementation in In thin film transistors by combining plasma treatment and combustion process at low temperatures (250 °C). The single layer Al dielectric formed by this technique exhibited a higher areal capacitance and a lower leakage level compared with those of conventional solution-processed Al. The resulting TFTs presented a superior electrical performance at a low operating voltage of 2 V, with a positive threshold voltage of 0.39 V, a subthreshold swing of 0.V/decade, an On/Off ratio of 1.8×104, and a superior mobility of 136 cm2 V-1 s-1.",

keywords = "Low-temperature, Solution-processed, combustion synthesis, environmentally friendly, metal oxide thin-film transistors",

author = "Liu, \{Q. H.\} and C. Zhao and Zhao, \{C. Z.\} and Mitrovic, \{I. Z.\} and S. Hall and Xu, \{W. Y.\} and L. Yang and Lim, \{E. G.\} and Wang, \{Q. N.\} and Wei, \{Y. L.\} and Cao, \{Y. X.\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",

year = "2019",

month = jun,

doi = "10.1109/ICICDT.2019.8790939",

language = "English",

series = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

}

Liu, QH, Zhao, C, Zhao, CZ, Mitrovic, IZ, Hall, S, Xu, WY, Yang, L , Lim, EG, Wang, QN, Wei, YL & Cao, YX 2019, Plasma-Enhanced Combustion-Processed Al Gate Oxide for in Thin Film Transistors. in 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings., 8790939, 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, 17/06/19. https://doi.org/10.1109/ICICDT.2019.8790939

Plasma-Enhanced Combustion-Processed Al Gate Oxide for in Thin Film Transistors. / Liu, Q. H.; Zhao, C.; Zhao, C. Z. et al.
17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8790939 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Plasma-Enhanced Combustion-Processed Al Gate Oxide for in Thin Film Transistors

AU - Liu, Q. H.

AU - Zhao, C.

AU - Zhao, C. Z.

AU - Mitrovic, I. Z.

AU - Hall, S.

AU - Xu, W. Y.

AU - Yang, L.

AU - Lim, E. G.

AU - Wang, Q. N.

AU - Wei, Y. L.

AU - Cao, Y. X.

PY - 2019/6

Y1 - 2019/6

N2 - In this study, we describe how to obtain high-quality Al dielectric thin films and their implementation in In thin film transistors by combining plasma treatment and combustion process at low temperatures (250 °C). The single layer Al dielectric formed by this technique exhibited a higher areal capacitance and a lower leakage level compared with those of conventional solution-processed Al. The resulting TFTs presented a superior electrical performance at a low operating voltage of 2 V, with a positive threshold voltage of 0.39 V, a subthreshold swing of 0.V/decade, an On/Off ratio of 1.8×104, and a superior mobility of 136 cm2 V-1 s-1.

AB - In this study, we describe how to obtain high-quality Al dielectric thin films and their implementation in In thin film transistors by combining plasma treatment and combustion process at low temperatures (250 °C). The single layer Al dielectric formed by this technique exhibited a higher areal capacitance and a lower leakage level compared with those of conventional solution-processed Al. The resulting TFTs presented a superior electrical performance at a low operating voltage of 2 V, with a positive threshold voltage of 0.39 V, a subthreshold swing of 0.V/decade, an On/Off ratio of 1.8×104, and a superior mobility of 136 cm2 V-1 s-1.

KW - Low-temperature

KW - Solution-processed

KW - combustion synthesis

KW - environmentally friendly

KW - metal oxide thin-film transistors

UR - https://www.scopus.com/pages/publications/85071437589

U2 - 10.1109/ICICDT.2019.8790939

DO - 10.1109/ICICDT.2019.8790939

M3 - Conference Proceeding

AN - SCOPUS:85071437589

T3 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

BT - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019

Y2 - 17 June 2019 through 19 June 2019

ER -

Liu QH, Zhao C, Zhao CZ, Mitrovic IZ, Hall S, Xu WY et al. Plasma-Enhanced Combustion-Processed Al Gate Oxide for in Thin Film Transistors. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8790939. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). doi: 10.1109/ICICDT.2019.8790939

Plasma-Enhanced Combustion-Processed Al Gate Oxide for in Thin Film Transistors

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