Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide

M. Werner; C. Z. Zhao; S. Taylor; P. R. Chalker; K. Black; J. Gaskell.

doi:10.1109/IPFA.2009.5232568

Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide

M. Werner^*
, C. Z. Zhao
, S. Taylor
, P. R. Chalker
, K. Black
, J. Gaskell.

^*Corresponding author for this work

University of Liverpool

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

5 Citations (Scopus)

Abstract

The frequency dispersion of La doped zirconia and cerium doped hafnia films is considered. Doping at concentration of approximately 10% stabilizes crystalline phases with hlgher-k values. The dielectric relaxation of La doped zirconia films is more severe than the cerium doped hafnia.

Original language	English
Title of host publication	Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Pages	625-627
Number of pages	3
DOIs	https://doi.org/10.1109/IPFA.2009.5232568
Publication status	Published - 2009
Event	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 - Suzhou, China Duration: 6 Jul 2009 → 10 Jul 2009

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Country/Territory	China
City	Suzhou
Period	6/07/09 → 10/07/09

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10.1109/IPFA.2009.5232568

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Werner, M., Zhao, C. Z., Taylor, S., Chalker, P. R., Black, K., & Gaskell., J. (2009). Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide. In Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 (pp. 625-627). Article 5232568 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2009.5232568

Werner, M. ; Zhao, C. Z. ; Taylor, S. et al. / Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide. Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. pp. 625-627 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{4538c930d55440189aa1df4a68ab2d44,

title = "Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide",

abstract = "The frequency dispersion of La doped zirconia and cerium doped hafnia films is considered. Doping at concentration of approximately 10\% stabilizes crystalline phases with hlgher-k values. The dielectric relaxation of La doped zirconia films is more severe than the cerium doped hafnia.",

author = "M. Werner and Zhao, \{C. Z.\} and S. Taylor and Chalker, \{P. R.\} and K. Black and J. Gaskell.",

year = "2009",

doi = "10.1109/IPFA.2009.5232568",

language = "English",

isbn = "9781424439102",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "625--627",

booktitle = "Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009",

note = "2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 ; Conference date: 06-07-2009 Through 10-07-2009",

}

Werner, M, Zhao, CZ, Taylor, S, Chalker, PR, Black, K & Gaskell., J 2009, Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide. in Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009., 5232568, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 625-627, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009, Suzhou, China, 6/07/09. https://doi.org/10.1109/IPFA.2009.5232568

Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide. / Werner, M.; Zhao, C. Z.; Taylor, S. et al.
Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 625-627 5232568 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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AU - Zhao, C. Z.

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AU - Chalker, P. R.

AU - Black, K.

AU - Gaskell., J.

PY - 2009

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N2 - The frequency dispersion of La doped zirconia and cerium doped hafnia films is considered. Doping at concentration of approximately 10% stabilizes crystalline phases with hlgher-k values. The dielectric relaxation of La doped zirconia films is more severe than the cerium doped hafnia.

AB - The frequency dispersion of La doped zirconia and cerium doped hafnia films is considered. Doping at concentration of approximately 10% stabilizes crystalline phases with hlgher-k values. The dielectric relaxation of La doped zirconia films is more severe than the cerium doped hafnia.

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DO - 10.1109/IPFA.2009.5232568

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T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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BT - Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

T2 - 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

Y2 - 6 July 2009 through 10 July 2009

ER -

Werner M, Zhao CZ, Taylor S, Chalker PR, Black K, Gaskell. J. Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide. In Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 625-627. 5232568. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2009.5232568

Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide

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