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Performance investigation of 120 Gb/s all-optical logic XOR gate using dual-reflective semiconductor optical amplifier-based scheme

  • Amer Kotb*
  • , Kyriakos E. Zoiros
  • , Chunlei Guo
  • *Corresponding author for this work
  • Guo Photonic Laboratory
  • CAS - Changchun Institute of Optics Fine Mechanics and Physics
  • Al-Fayoum University
  • Democritus University of Thrace
  • University of Rochester

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

Reflective semiconductor optical amplifiers (RSOAs) use an anti-reflective coating on the front facet and a high reflectivity coating on the rear facet to produce a higher gain than conventional SOAs. In this paper, this potential is exploited to numerically investigate the ultrafast performance of an all-optical logic XOR gate implemented using a dual-RSOA-based scheme at a data rate of 120 Gb/s. The simulation results demonstrate that the XOR gate is capable of operating at 120 Gb/s with better performance than when using conventional SOAs.

Original languageEnglish
Pages (from-to)1640-1649
Number of pages10
JournalJournal of Computational Electronics
Volume17
Issue number4
DOIs
Publication statusPublished - 1 Dec 2018
Externally publishedYes

Keywords

  • All-optical XOR gate
  • Quality factor
  • Reflective semiconductor optical amplifier

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