Multiferroic Magnetic Sensor Based on AlN and Al0.7Sc0.3N thin film S

Yuxi Wang; Kangfu Liu; Shuai Shao; Jangyong Kim; Tao Wu

doi:10.1109/IUS52206.2021.9593330

Multiferroic Magnetic Sensor Based on AlN and Al_0.7Sc_0.3N thin film S

Yuxi Wang, Kangfu Liu, Shuai Shao, Jangyong Kim, Tao Wu

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

In this paper, multiferroic magnetic sensors based on AlN and Al0.7Sc0.3N thin films have been studied by Finite Element Analysis (FEA). Magnetostrictive material FeGaB is utilized as the sensing element to detect external DC magnetic fields. The bilayer composite magnetoelectric structure is designed to operate at contour mode resonance in order to increase the sensitivity. A detailed description of the device model and simulated parameters are introduced. Under different DC magnetic fields, the device resonant frequency will change due toDelta E effect. Furthermore, the thickness influence of AlN and Al0.7Sc0.3N thin films on the resonator characteristics has been analyzed.

Original language	English
Journal	IEEE International Ultrasonics Symposium, IUS
DOIs	https://doi.org/10.1109/IUS52206.2021.9593330
Publication status	Published - 2021
Externally published	Yes
Event	2021 IEEE International Ultrasonics Symposium, IUS 2021 - Virtual, Online, China Duration: 11 Sept 2011 → 16 Sept 2011

Keywords

COMSOL simulation
Contour mode resonator
Magnetic sensor
Multiferroic

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10.1109/IUS52206.2021.9593330

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@article{852d8239b5db41f7ac7ca9cc1c76a056,

title = "Multiferroic Magnetic Sensor Based on AlN and Al0.7Sc0.3N thin film S",

abstract = "In this paper, multiferroic magnetic sensors based on AlN and Al0.7Sc0.3N thin films have been studied by Finite Element Analysis (FEA). Magnetostrictive material FeGaB is utilized as the sensing element to detect external DC magnetic fields. The bilayer composite magnetoelectric structure is designed to operate at contour mode resonance in order to increase the sensitivity. A detailed description of the device model and simulated parameters are introduced. Under different DC magnetic fields, the device resonant frequency will change due toDelta E effect. Furthermore, the thickness influence of AlN and Al0.7Sc0.3N thin films on the resonator characteristics has been analyzed.",

keywords = "COMSOL simulation, Contour mode resonator, Magnetic sensor, Multiferroic",

author = "Yuxi Wang and Kangfu Liu and Shuai Shao and Jangyong Kim and Tao Wu",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Ultrasonics Symposium, IUS 2021 ; Conference date: 11-09-2011 Through 16-09-2011",

year = "2021",

doi = "10.1109/IUS52206.2021.9593330",

language = "English",

journal = "IEEE International Ultrasonics Symposium, IUS",

issn = "1948-5719",

}

TY - JOUR

T1 - Multiferroic Magnetic Sensor Based on AlN and Al0.7Sc0.3N thin film S

AU - Wang, Yuxi

AU - Liu, Kangfu

AU - Shao, Shuai

AU - Kim, Jangyong

AU - Wu, Tao

PY - 2021

Y1 - 2021

N2 - In this paper, multiferroic magnetic sensors based on AlN and Al0.7Sc0.3N thin films have been studied by Finite Element Analysis (FEA). Magnetostrictive material FeGaB is utilized as the sensing element to detect external DC magnetic fields. The bilayer composite magnetoelectric structure is designed to operate at contour mode resonance in order to increase the sensitivity. A detailed description of the device model and simulated parameters are introduced. Under different DC magnetic fields, the device resonant frequency will change due toDelta E effect. Furthermore, the thickness influence of AlN and Al0.7Sc0.3N thin films on the resonator characteristics has been analyzed.

AB - In this paper, multiferroic magnetic sensors based on AlN and Al0.7Sc0.3N thin films have been studied by Finite Element Analysis (FEA). Magnetostrictive material FeGaB is utilized as the sensing element to detect external DC magnetic fields. The bilayer composite magnetoelectric structure is designed to operate at contour mode resonance in order to increase the sensitivity. A detailed description of the device model and simulated parameters are introduced. Under different DC magnetic fields, the device resonant frequency will change due toDelta E effect. Furthermore, the thickness influence of AlN and Al0.7Sc0.3N thin films on the resonator characteristics has been analyzed.

KW - COMSOL simulation

KW - Contour mode resonator

KW - Magnetic sensor

KW - Multiferroic

UR - https://www.scopus.com/pages/publications/85122852010

U2 - 10.1109/IUS52206.2021.9593330

DO - 10.1109/IUS52206.2021.9593330

M3 - Conference article

AN - SCOPUS:85122852010

SN - 1948-5719

JO - IEEE International Ultrasonics Symposium, IUS

JF - IEEE International Ultrasonics Symposium, IUS

T2 - 2021 IEEE International Ultrasonics Symposium, IUS 2021

Y2 - 11 September 2011 through 16 September 2011

ER -

Multiferroic Magnetic Sensor Based on AlN and Al_0.7Sc_0.3N thin film S

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Keywords

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