TY - JOUR
T1 - Monolithically Integrated PWM Circuit Based on AlGaN/GaN MIS-HMETs for All-GaN Smart Power System
AU - Shen, Yi
AU - Li, Ziqian
AU - Li, Ang
AU - Liu, Wen
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - This work investigates a monolithic integrated pulse width modulation (PWM) circuit based on aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMTs). The PWM circuit contains comparator, hysteresis comparator, and sawtooth generator, which all show stable performances. The PWM circuit is able to generate a 500 kHz high-frequency PWM signal with a 5.5 V swing and an adjustable duty cycle from 30% to 70%. These results exhibit a feasible example to achieve the all-GaN monolithic integration of signal and control blocks in smart power ICs by using GaN MIS-HMETs.
AB - This work investigates a monolithic integrated pulse width modulation (PWM) circuit based on aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMTs). The PWM circuit contains comparator, hysteresis comparator, and sawtooth generator, which all show stable performances. The PWM circuit is able to generate a 500 kHz high-frequency PWM signal with a 5.5 V swing and an adjustable duty cycle from 30% to 70%. These results exhibit a feasible example to achieve the all-GaN monolithic integration of signal and control blocks in smart power ICs by using GaN MIS-HMETs.
UR - https://www.scopus.com/pages/publications/85122852201
U2 - 10.1109/ASICON52560.2021.9620315
DO - 10.1109/ASICON52560.2021.9620315
M3 - Conference article
AN - SCOPUS:85122852201
SN - 2162-7541
JO - Proceedings of International Conference on ASIC
JF - Proceedings of International Conference on ASIC
T2 - 14th IEEE International Conference on ASIC, ASICON 2021
Y2 - 26 October 2021 through 29 October 2021
ER -