Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s

Amer Kotb

doi:10.1007/s13538-015-0312-4

Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s

Amer Kotb^*

^*Corresponding author for this work

Al-Fayoum University

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach–Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor (Q-factor) on signals and QDs-SOAs’ parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ∼1 Tb/s.

Original language	English
Pages (from-to)	288-295
Number of pages	8
Journal	Brazilian Journal of Physics
Volume	45
Issue number	3
DOIs	https://doi.org/10.1007/s13538-015-0312-4
Publication status	Published - 1 Jun 2015
Externally published	Yes

Keywords

1 Tb/s
Amplified spontaneous emission
Quantum-dot semiconductor optical amplifier
XNOR gate

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10.1007/s13538-015-0312-4

Cite this

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title = "Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s",

abstract = "The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach–Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor (Q-factor) on signals and QDs-SOAs{\textquoteright} parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ∼1 Tb/s.",

keywords = "1 Tb/s, Amplified spontaneous emission, Quantum-dot semiconductor optical amplifier, XNOR gate",

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PY - 2015/6/1

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N2 - The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach–Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor (Q-factor) on signals and QDs-SOAs’ parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ∼1 Tb/s.

AB - The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach–Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor (Q-factor) on signals and QDs-SOAs’ parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ∼1 Tb/s.

KW - 1 Tb/s

KW - Amplified spontaneous emission

KW - Quantum-dot semiconductor optical amplifier

KW - XNOR gate

UR - https://www.scopus.com/pages/publications/84928816170

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JO - Brazilian Journal of Physics

JF - Brazilian Journal of Physics

IS - 3

ER -

Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s

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Keywords

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