Memristive hysteresis and stacking-fault-induced semiconductor to metal transition in sulfur-modified multiwall carbon nanotubes

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Journal of Materials Chemistry C
DOIs	https://doi.org/10.1039/D5TC02657A
Publication status	Published - 15 Sept 2025

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@article{fe8dd1405ab54b9a8a2109a5ea66ad57,

title = "Memristive hysteresis and stacking-fault-induced semiconductor to metal transition in sulfur-modified multiwall carbon nanotubes",

author = "Yan Liu and Shanling Wang and Jian Guo and Hansong Wu and Li Lei and Joanna Borowiec and Omololu Odunmbaku and Xilong Guo and Filippo Boi",

year = "2025",

month = sep,

day = "15",

doi = "10.1039/D5TC02657A",

language = "English",

journal = "Journal of Materials Chemistry C",

issn = "2050-7534",

}

TY - JOUR

T1 - Memristive hysteresis and stacking-fault-induced semiconductor to metal transition in sulfur-modified multiwall carbon nanotubes

AU - Liu, Yan

AU - Wang, Shanling

AU - Guo, Jian

AU - Wu, Hansong

AU - Lei, Li

AU - Borowiec, Joanna

AU - Odunmbaku, Omololu

AU - Guo, Xilong

AU - Boi, Filippo

PY - 2025/9/15

Y1 - 2025/9/15

U2 - 10.1039/D5TC02657A

DO - 10.1039/D5TC02657A

M3 - Article

SN - 2050-7534

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

ER -