@article{a313a664ad494f53adf0b52daffb43e0,
title = "Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs with Partially Recessed Gate and ZrO Charge Trapping Layer",
abstract = "Novel normally-OFF AlGaN/GaN MIS-high electron mobility transistors (HEMTs) with a ZrOx charge trapping layer are proposed. The deposition of the ZrOx charge trapping layer on the partially recessed AlGaN in conjunction with the Al2O3 gate dielectric has been accomplished. The developed MIS-HEMTs exhibit a threshold voltage of 1.55 ± 0.4 V and a maximum drain current of 730 ± 6 mA/mm, while associated low ON-resistance of 7.1 ± 0.2 Ω mm, for a gate to drain separation of 3 μm. The TCAD simulation results are presented to explore the charge trapping and de-trapping behaviors. Moreover, the devices exhibit a high breakdown voltage. The results indicate the merits of employing ZrOx charge trapping layer to realize the normally-OFF GaN devices with low ON-state resistance.",
keywords = "AlGaN/GaN, MIS-high electron mobility transistors (HEMTs), ON-resistance, ZrO, breakdown voltage, normally-OFF",
author = "Yutao Cai and Yuanlei Zhang and Ye Liang and Mitrovic, \{Ivona Z.\} and Huiqing Wen and Wen Liu and Cezhou Zhao",
note = "Funding Information: Manuscript received March 6, 2021; revised May 8, 2021; accepted July 22, 2021. Date of publication August 11, 2021; date of current version August 23, 2021. This work was supported in part by the Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Laboratory for New Energy Technology under Grant RR0140; in part by the Suzhou Science and Technology Program under Grant SYG201728 and Grant SYG201923; in part by the Key Program Special Fund in Xi{\textquoteright}an Jiaotong-liverpool University (XJTLU) under Grant KSF-A-05, Grant KSF-A-12, and Grant KSF-T-07; and in part by the XJTLU Research Development Fund under Grant PGRS-13-03-01and Grant PGRS1912003. The work of Ivona Z. Mitrovic was supported in part by the British Council UK-India Education and Research Initiative (UKIERI) under Project IND/CONT/G/17-18/18 and Project 184-1/2018(IC) and in part by the Engineering and Physical Sciences Research Council (EPSRC) Projects UKRI GCRF GIAA under Award EP/P510981/1. The review of this article was arranged by Editor S. Rajan. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2021",
month = sep,
day = "1",
doi = "10.1109/TED.2021.3100002",
language = "English",
volume = "68",
pages = "4310--4316",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "9",
}