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Linearity Analysis of Multi-loop Regulation Voltage Reference Based on GaN MIS-HEMTs

  • Ruiqi Gong
  • , Hengzhi Qiu
  • , Yunsong Xu
  • , Jiangmin Gu*
  • , Ang Li
  • , Wen Liu*
  • *Corresponding author for this work
  • Xi'an Jiaotong-Liverpool University
  • University of Liverpool
  • Advanced Semiconductor Research Center

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

2 Citations (Scopus)

Abstract

Wide-bandgap gallium nitride devices offer a high critical field, good thermal conductivity, and fast switching, enabling high-voltage, high-Temperature applications. This work introduces a generic multi-loop regulated voltage reference topology on a monolithic AlGaN/GaN MIS-HEMT consisting of a D-mode and multiple E-modes. A 4-Transistor implementation produces a stable 2.33 V Vref across a 2.8∼50 V VDD supply while achieving an extremely low line sensitivity of 1.27×10-10 %/V. Closed-form analytical expressions for reference voltage, line regulation, and start-up voltage are derived to reveal parameter dependencies. These analytical results provide systematic guidance and practical design insights for GaN-based voltage references in highvoltage sensor biasing, power-integration modules, and nextgeneration intelligent power converters.

Original languageEnglish
Title of host publication2025 22th China International Forum on Solid State Lighting and 2025 11th International Forum on Wide Bandgap Semiconductors, SSLCHINA
Subtitle of host publicationIFWS 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages328-331
Number of pages4
ISBN (Electronic)9798331558666
DOIs
Publication statusPublished - 2025
Event22th China International Forum on Solid State Lighting and 11th International Forum on Wide Bandgap Semiconductors, SSLCHINA:IFWS 2025 - Xiamen, China
Duration: 11 Nov 202514 Nov 2025

Publication series

Name2025 22th China International Forum on Solid State Lighting and 2025 11th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2025

Conference

Conference22th China International Forum on Solid State Lighting and 11th International Forum on Wide Bandgap Semiconductors, SSLCHINA:IFWS 2025
Country/TerritoryChina
CityXiamen
Period11/11/2514/11/25

Keywords

  • closed-form derivation
  • GaN
  • line sensitivity
  • MIS-HEMT
  • multi-loop regulation
  • voltage reference

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