TY - GEN
T1 - Junction Temperature Measurement of GaN Device Using Short-Circuit Current as Temperature Sensitive Electrical Parameter
AU - Qu, Zifeng
AU - Wen, Huiqing
N1 - Publisher Copyright:
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2025.
PY - 2025
Y1 - 2025
N2 - GaN devices usually operate at high junction temperatures, so it is crucial to monitor the temperature of the device as well as thermal management. Traditional methods for monitoring junction temperature include physical contact and optical methods, but the practical application of these two methods is often limited by the packaging of the device as well as the size of the module, so the best way to monitor the junction temperature is the electrical method, which utilizes the temperature-sensitive electrical parameter (TSEP) to infer the junction temperature. Currently, the TSEP measurement method is more mature for Si-based devices, but there is less research on GaN-based devices, especially the short-circuit (SC) current has not been related work to study it. In this thesis, the SC current is utilized as TSEP to measure the junction temperature, and find that this method has good linearity and sensitivity, which is suitable for monitoring the junction temperature of the device in circuit applications, which provides an alternative method for junction temperature measurement of GaN devices.
AB - GaN devices usually operate at high junction temperatures, so it is crucial to monitor the temperature of the device as well as thermal management. Traditional methods for monitoring junction temperature include physical contact and optical methods, but the practical application of these two methods is often limited by the packaging of the device as well as the size of the module, so the best way to monitor the junction temperature is the electrical method, which utilizes the temperature-sensitive electrical parameter (TSEP) to infer the junction temperature. Currently, the TSEP measurement method is more mature for Si-based devices, but there is less research on GaN-based devices, especially the short-circuit (SC) current has not been related work to study it. In this thesis, the SC current is utilized as TSEP to measure the junction temperature, and find that this method has good linearity and sensitivity, which is suitable for monitoring the junction temperature of the device in circuit applications, which provides an alternative method for junction temperature measurement of GaN devices.
KW - Gallium nitride (GaN)
KW - junction temperature
KW - short-circuit (SC) current
KW - temperature sensitive electrical parameter (TSEP)
UR - https://www.scopus.com/pages/publications/105000819883
U2 - 10.1007/978-981-96-2456-0_57
DO - 10.1007/978-981-96-2456-0_57
M3 - Conference Proceeding
AN - SCOPUS:105000819883
SN - 9789819624553
T3 - Lecture Notes in Electrical Engineering
SP - 528
EP - 534
BT - Proceedings of 2024 International Conference on Smart Electrical Grid and Renewable Energy, SEGRE 2024 - Volume 1
A2 - Wen, Fushuan
A2 - Liu, Haoming
A2 - Wen, Huiqing
A2 - Wang, Shunli
PB - Springer Science and Business Media Deutschland GmbH
T2 - 2nd International Conference on Smart Electrical Grid and Renewable Energy, SEGRE 2024
Y2 - 9 August 2024 through 12 August 2024
ER -