Abstract
Using the density-functional-theory-based atomic modeling, the stable interface structure and the resultant magnetocrystalline anisotropy (MCA) of the Fe/MgO(001) for magnetic random access memory have been studied. The most stable surface structure of Fe/MgO(001) thin-film system was found to be either defect free or possessing oxygen vacancies in a c(2 ×1) periodicity. The formation of the oxygen vacancies in c(2×1) periodicity on MgO(001) surface reduced the MCA of Fe layer from 1.38 to 0.31 meV/atom. The reduced MCA is originated from the filling of the minority states of the Fe orbital below Fermi level.
| Original language | English |
|---|---|
| Article number | 5960764 |
| Pages (from-to) | 1287-1289 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 32 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - Sept 2011 |
| Externally published | Yes |
Keywords
- Density functional theory
- Fe/MgO(001)
- interface structure
- perpendicular magnetic anisotropy