Improvement of 4H-SiC MOS capacitor reliability under high positive-bias stress by low-pressure oxidation

Zhaoyi Wang, Zijie Lin, Jingang Li, Santai Xu, Wen Liu*

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

Fingerprint

Dive into the research topics of 'Improvement of 4H-SiC MOS capacitor reliability under high positive-bias stress by low-pressure oxidation'. Together they form a unique fingerprint.

Material Science

Engineering

Physics

Earth and Planetary Sciences