High-Temperature Device Model for GaN-based MIS-HEMTs

Hanlin Cao; Pingyu Cao; Sang Lam; Miao Cui

doi:10.1109/WiPDA-Asia63772.2025.11184006

High-Temperature Device Model for GaN-based MIS-HEMTs

Hanlin Cao
, Pingyu Cao
, Sang Lam
, Miao Cui^*

^*Corresponding author for this work

Xi'an Jiaotong-Liverpool University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

This study develops a high-temperature model for GaN-based MIS-HEMTs, enabling accurate simulation from 25 °C to 200 °C. Using the Advanced Curtice Quadratic Model, key parameters like threshold voltage and transconductance were fitted to experimental data and adjusted with temperature. Simulated I-V characteristics closely matched measurements, showing clear thermal trends. Dynamic DCFL inverter simulations confirmed the model's reliability, with rise time increasing at higher temperatures. The model accounts for parasitic effects and supports both static and dynamic analysis, making it suitable for high-temperature applications in automotive, aerospace, and renewable energy.

Original language	English
Title of host publication	2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798331511098
DOIs	https://doi.org/10.1109/WiPDA-Asia63772.2025.11184006
Publication status	Published - 2025
Event	2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025 - Beijing, China Duration: 15 Aug 2025 → 17 Aug 2025

Publication series

Name	2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025

Conference

Conference	2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025
Country/Territory	China
City	Beijing
Period	15/08/25 → 17/08/25

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/WiPDA-Asia63772.2025.11184006

Cite this

Cao, H., Cao, P., Lam, S., & Cui, M. (2025). High-Temperature Device Model for GaN-based MIS-HEMTs. In 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025 (2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA-Asia63772.2025.11184006

@inproceedings{7077f434f604478e839fe5a78a62795c,

title = "High-Temperature Device Model for GaN-based MIS-HEMTs",

abstract = "This study develops a high-temperature model for GaN-based MIS-HEMTs, enabling accurate simulation from 25 °C to 200 °C. Using the Advanced Curtice Quadratic Model, key parameters like threshold voltage and transconductance were fitted to experimental data and adjusted with temperature. Simulated I-V characteristics closely matched measurements, showing clear thermal trends. Dynamic DCFL inverter simulations confirmed the model's reliability, with rise time increasing at higher temperatures. The model accounts for parasitic effects and supports both static and dynamic analysis, making it suitable for high-temperature applications in automotive, aerospace, and renewable energy.",

author = "Hanlin Cao and Pingyu Cao and Sang Lam and Miao Cui",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025 ; Conference date: 15-08-2025 Through 17-08-2025",

year = "2025",

doi = "10.1109/WiPDA-Asia63772.2025.11184006",

language = "English",

series = "2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025",

}

Cao, H, Cao, P, Lam, S & Cui, M 2025, High-Temperature Device Model for GaN-based MIS-HEMTs. in 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025. 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025, Institute of Electrical and Electronics Engineers Inc., 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025, Beijing, China, 15/08/25. https://doi.org/10.1109/WiPDA-Asia63772.2025.11184006

High-Temperature Device Model for GaN-based MIS-HEMTs. / Cao, Hanlin; Cao, Pingyu; Lam, Sang et al.
2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025. Institute of Electrical and Electronics Engineers Inc., 2025. (2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - High-Temperature Device Model for GaN-based MIS-HEMTs

AU - Cao, Hanlin

AU - Cao, Pingyu

AU - Lam, Sang

AU - Cui, Miao

PY - 2025

Y1 - 2025

N2 - This study develops a high-temperature model for GaN-based MIS-HEMTs, enabling accurate simulation from 25 °C to 200 °C. Using the Advanced Curtice Quadratic Model, key parameters like threshold voltage and transconductance were fitted to experimental data and adjusted with temperature. Simulated I-V characteristics closely matched measurements, showing clear thermal trends. Dynamic DCFL inverter simulations confirmed the model's reliability, with rise time increasing at higher temperatures. The model accounts for parasitic effects and supports both static and dynamic analysis, making it suitable for high-temperature applications in automotive, aerospace, and renewable energy.

AB - This study develops a high-temperature model for GaN-based MIS-HEMTs, enabling accurate simulation from 25 °C to 200 °C. Using the Advanced Curtice Quadratic Model, key parameters like threshold voltage and transconductance were fitted to experimental data and adjusted with temperature. Simulated I-V characteristics closely matched measurements, showing clear thermal trends. Dynamic DCFL inverter simulations confirmed the model's reliability, with rise time increasing at higher temperatures. The model accounts for parasitic effects and supports both static and dynamic analysis, making it suitable for high-temperature applications in automotive, aerospace, and renewable energy.

UR - https://www.scopus.com/pages/publications/105019961780

U2 - 10.1109/WiPDA-Asia63772.2025.11184006

DO - 10.1109/WiPDA-Asia63772.2025.11184006

M3 - Conference Proceeding

AN - SCOPUS:105019961780

T3 - 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025

BT - 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025

Y2 - 15 August 2025 through 17 August 2025

ER -

Cao H, Cao P, Lam S , Cui M. High-Temperature Device Model for GaN-based MIS-HEMTs. In 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025. Institute of Electrical and Electronics Engineers Inc. 2025. (2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025). doi: 10.1109/WiPDA-Asia63772.2025.11184006

High-Temperature Device Model for GaN-based MIS-HEMTs

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