@inproceedings{ac8be3542026458e972409a5bc3b9b3f,
title = "High ION/IOFF Ratio > 105 Ag-Gated E-Mode GaN p-FETs Enabled by p++-GaN Contact and Polarization-Enhanced AlN Layer",
abstract = "This work reports the achievement of high-performance enhancement-mode GaN p-FETs on a novel epitax-ial structure. Through the optimization of the epitaxial structure, which includes a heavily doped p ++ -GaN contact layer and an ultra-thin AlN insertion layer, hole mobility and density are significantly enhanced, leading to a substantial reduction in sheet resistance (R\_sh) I. As a result, a record-low contact resistance (R\_c) of 2.17 Ω ⋯ mm and specific contact resistivity ρc) of 1.5 × 10-6 Ω ⋯ cm2 are achieved. Additionally, by using Ag as the Schottky gate, we successfully demonstrate Ag-gated p-FETs with a threshold voltage VTH) of -0.6 V, an ON-state current I\_ON) of 6.7",
keywords = "Ag-gated p-FETs, CMOS, Enhancement-mode, GaN, Ohmic contacts, ratio",
author = "Zhiwei Sun and Hao Tian and Weisheng Wang and Xuanming Zhang and Maoqing Ling and Jie Zhang and Yinchao Zhao and \{Van Zalinge\}, Harm and Mitrovic, \{Ivona Z.\} and Low, \{Kain Lu\} and Sen Huang and Wen Liu",
note = "Publisher Copyright: {\textcopyright} 2025 The Institute of Electrical Engineers of Japan - IEEJ.; 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025 ; Conference date: 01-06-2025 Through 05-06-2025",
year = "2025",
doi = "10.23919/ISPSD62843.2025.11117427",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "317--320",
booktitle = "Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025",
}