High-isolation bonding pad design for silicon RFIC up to 20 GHz

Sang Lam; Philip K.T. Mok; Ping K. Ko; Mansun Chan

doi:10.1109/LED.2003.816589

High-isolation bonding pad design for silicon RFIC up to 20 GHz

Sang Lam^*
, Philip K.T. Mok
, Ping K. Ko
, Mansun Chan

^*Corresponding author for this work

Hong Kong University of Science and Technology

Research output: Contribution to journal › Letter › peer-review

9 Citations (Scopus)

Abstract

A simple depletion-insulation (DI) bonding pad structure is presented for silicon radio frequency integrated circuits (RFIC). Experimental results show that DI bonding pads can achieve a 3 to 7 dB improvement in cross-talk isolation compared with an ordinary bonding pad at all measured frequencies. An improvement of up to 90% in the Q-factor is also achieved by the DI pad indicating a significantly reduced high-frequency substrate loss. When compared with a ground-shield (GS) bonding pad, the isolation and the Q-factor of the DI bonding pad is inferior. However, the DI pad has a 40% smaller pad capacitance compared with the GS pad. The DI structure can be used in interconnect optimization to achieve high cross-talk isolation and low substrate loss, with minimal increase in parasitic capacitance.

Original language	English
Pages (from-to)	601-603
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	9
DOIs	https://doi.org/10.1109/LED.2003.816589
Publication status	Published - 1 Sept 2003
Externally published	Yes

Keywords

Bonding pads
CMOS radio-frequency integrated circuits
Cross-talk isolation
Passive components
Silicon RFIC

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10.1109/LED.2003.816589

Cite this

@article{f2bda5d234f046438ad3ffd08dbfa4a9,

title = "High-isolation bonding pad design for silicon RFIC up to 20 GHz",

abstract = "A simple depletion-insulation (DI) bonding pad structure is presented for silicon radio frequency integrated circuits (RFIC). Experimental results show that DI bonding pads can achieve a 3 to 7 dB improvement in cross-talk isolation compared with an ordinary bonding pad at all measured frequencies. An improvement of up to 90\% in the Q-factor is also achieved by the DI pad indicating a significantly reduced high-frequency substrate loss. When compared with a ground-shield (GS) bonding pad, the isolation and the Q-factor of the DI bonding pad is inferior. However, the DI pad has a 40\% smaller pad capacitance compared with the GS pad. The DI structure can be used in interconnect optimization to achieve high cross-talk isolation and low substrate loss, with minimal increase in parasitic capacitance.",

keywords = "Bonding pads, CMOS radio-frequency integrated circuits, Cross-talk isolation, Passive components, Silicon RFIC",

author = "Sang Lam and Mok, \{Philip K.T.\} and Ko, \{Ping K.\} and Mansun Chan",

note = "Funding Information: Manuscript received April 23, 2003; revised June 25, 2003. This work is sponsored by a Competitive Earmarked Research Grant HKUST6189/01E from the Research Grant Council of Hong Kong. The review of this letter was arranged by Editor K. De Meyer.",

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doi = "10.1109/LED.2003.816589",

language = "English",

volume = "24",

pages = "601--603",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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T1 - High-isolation bonding pad design for silicon RFIC up to 20 GHz

AU - Lam, Sang

AU - Mok, Philip K.T.

AU - Ko, Ping K.

AU - Chan, Mansun

N1 - Funding Information: Manuscript received April 23, 2003; revised June 25, 2003. This work is sponsored by a Competitive Earmarked Research Grant HKUST6189/01E from the Research Grant Council of Hong Kong. The review of this letter was arranged by Editor K. De Meyer.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - A simple depletion-insulation (DI) bonding pad structure is presented for silicon radio frequency integrated circuits (RFIC). Experimental results show that DI bonding pads can achieve a 3 to 7 dB improvement in cross-talk isolation compared with an ordinary bonding pad at all measured frequencies. An improvement of up to 90% in the Q-factor is also achieved by the DI pad indicating a significantly reduced high-frequency substrate loss. When compared with a ground-shield (GS) bonding pad, the isolation and the Q-factor of the DI bonding pad is inferior. However, the DI pad has a 40% smaller pad capacitance compared with the GS pad. The DI structure can be used in interconnect optimization to achieve high cross-talk isolation and low substrate loss, with minimal increase in parasitic capacitance.

AB - A simple depletion-insulation (DI) bonding pad structure is presented for silicon radio frequency integrated circuits (RFIC). Experimental results show that DI bonding pads can achieve a 3 to 7 dB improvement in cross-talk isolation compared with an ordinary bonding pad at all measured frequencies. An improvement of up to 90% in the Q-factor is also achieved by the DI pad indicating a significantly reduced high-frequency substrate loss. When compared with a ground-shield (GS) bonding pad, the isolation and the Q-factor of the DI bonding pad is inferior. However, the DI pad has a 40% smaller pad capacitance compared with the GS pad. The DI structure can be used in interconnect optimization to achieve high cross-talk isolation and low substrate loss, with minimal increase in parasitic capacitance.

KW - Bonding pads

KW - CMOS radio-frequency integrated circuits

KW - Cross-talk isolation

KW - Passive components

KW - Silicon RFIC

UR - https://www.scopus.com/pages/publications/0141595168

U2 - 10.1109/LED.2003.816589

DO - 10.1109/LED.2003.816589

M3 - Letter

AN - SCOPUS:0141595168

SN - 0741-3106

VL - 24

SP - 601

EP - 603

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

High-isolation bonding pad design for silicon RFIC up to 20 GHz

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Keywords

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