Grounded Isolation Trenches in Gan-on-Si Power Integrated Circuits: An Electromagnetic Study for Trench Filling Considerations

Rui Ray Yao; Zijin Jiang; Miao Cui; Zhao Wang; Sang Lam; Stephen Taylor

doi:10.1109/EDSSC64492.2025.11182919

Grounded Isolation Trenches in Gan-on-Si Power Integrated Circuits: An Electromagnetic Study for Trench Filling Considerations

Rui Ray Yao
, Zijin Jiang
, Miao Cui
, Zhao Wang
, Sang Lam^*
, Stephen Taylor

^*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

We report further work on isolation trenches for suppressing substrate coupling in GaN-on-Si power integrated circuits (ICs). Our computational electromagnetic (EM) investigation reveals that a grounded trench filled with highlydoped polysilicon or low-conductivity aluminium by lowtemperature deposition is also effective for signal isolation (with |S₂₁| close to - 53dB at 100MHz for a 700-μm lateral separation distance). The results imply fabrication flexibility in the choices of filling materials and processing conditions for isolation trenches that are placed in the middle of the lateral distance.

Original language	English
Title of host publication	Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	195-198
Number of pages	4
ISBN (Electronic)	9798331522087
DOIs	https://doi.org/10.1109/EDSSC64492.2025.11182919
Publication status	Published - 2025
Event	16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025 - Yinchuan, China Duration: 13 Jun 2025 → 15 Jun 2025

Publication series

Name	Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025

Conference

Conference	16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025
Country/Territory	China
City	Yinchuan
Period	13/06/25 → 15/06/25

Keywords

computational EM
GaN-on-Si technology
isolation trench
substrate coupling
trench filling material

Access to Document

10.1109/EDSSC64492.2025.11182919

Cite this

Yao, R. R., Jiang, Z., Cui, M., Wang, Z., Lam, S., & Taylor, S. (2025). Grounded Isolation Trenches in Gan-on-Si Power Integrated Circuits: An Electromagnetic Study for Trench Filling Considerations. In Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025 (pp. 195-198). (Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC64492.2025.11182919

Yao, Rui Ray ; Jiang, Zijin ; Cui, Miao et al. / Grounded Isolation Trenches in Gan-on-Si Power Integrated Circuits : An Electromagnetic Study for Trench Filling Considerations. Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025. Institute of Electrical and Electronics Engineers Inc., 2025. pp. 195-198 (Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025).

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title = "Grounded Isolation Trenches in Gan-on-Si Power Integrated Circuits: An Electromagnetic Study for Trench Filling Considerations",

abstract = "We report further work on isolation trenches for suppressing substrate coupling in GaN-on-Si power integrated circuits (ICs). Our computational electromagnetic (EM) investigation reveals that a grounded trench filled with highlydoped polysilicon or low-conductivity aluminium by lowtemperature deposition is also effective for signal isolation (with |S21| close to - 53dB at 100MHz for a 700-μm lateral separation distance). The results imply fabrication flexibility in the choices of filling materials and processing conditions for isolation trenches that are placed in the middle of the lateral distance.",

keywords = "computational EM, GaN-on-Si technology, isolation trench, substrate coupling, trench filling material",

author = "Yao, \{Rui Ray\} and Zijin Jiang and Miao Cui and Zhao Wang and Sang Lam and Stephen Taylor",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025 ; Conference date: 13-06-2025 Through 15-06-2025",

year = "2025",

doi = "10.1109/EDSSC64492.2025.11182919",

language = "English",

series = "Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "195--198",

booktitle = "Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025",

}

Yao, RR, Jiang, Z, Cui, M , Wang, Z , Lam, S & Taylor, S 2025, Grounded Isolation Trenches in Gan-on-Si Power Integrated Circuits: An Electromagnetic Study for Trench Filling Considerations. in Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025. Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025, Institute of Electrical and Electronics Engineers Inc., pp. 195-198, 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025, Yinchuan, China, 13/06/25. https://doi.org/10.1109/EDSSC64492.2025.11182919

Grounded Isolation Trenches in Gan-on-Si Power Integrated Circuits: An Electromagnetic Study for Trench Filling Considerations. / Yao, Rui Ray; Jiang, Zijin; Cui, Miao et al.
Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025. Institute of Electrical and Electronics Engineers Inc., 2025. p. 195-198 (Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Grounded Isolation Trenches in Gan-on-Si Power Integrated Circuits

T2 - 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025

AU - Yao, Rui Ray

AU - Jiang, Zijin

AU - Cui, Miao

AU - Wang, Zhao

AU - Lam, Sang

AU - Taylor, Stephen

PY - 2025

Y1 - 2025

N2 - We report further work on isolation trenches for suppressing substrate coupling in GaN-on-Si power integrated circuits (ICs). Our computational electromagnetic (EM) investigation reveals that a grounded trench filled with highlydoped polysilicon or low-conductivity aluminium by lowtemperature deposition is also effective for signal isolation (with |S21| close to - 53dB at 100MHz for a 700-μm lateral separation distance). The results imply fabrication flexibility in the choices of filling materials and processing conditions for isolation trenches that are placed in the middle of the lateral distance.

AB - We report further work on isolation trenches for suppressing substrate coupling in GaN-on-Si power integrated circuits (ICs). Our computational electromagnetic (EM) investigation reveals that a grounded trench filled with highlydoped polysilicon or low-conductivity aluminium by lowtemperature deposition is also effective for signal isolation (with |S21| close to - 53dB at 100MHz for a 700-μm lateral separation distance). The results imply fabrication flexibility in the choices of filling materials and processing conditions for isolation trenches that are placed in the middle of the lateral distance.

KW - computational EM

KW - GaN-on-Si technology

KW - isolation trench

KW - substrate coupling

KW - trench filling material

UR - https://www.scopus.com/pages/publications/105019934225

U2 - 10.1109/EDSSC64492.2025.11182919

DO - 10.1109/EDSSC64492.2025.11182919

M3 - Conference Proceeding

AN - SCOPUS:105019934225

T3 - Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025

SP - 195

EP - 198

BT - Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 13 June 2025 through 15 June 2025

ER -

Yao RR, Jiang Z, Cui M , Wang Z , Lam S, Taylor S. Grounded Isolation Trenches in Gan-on-Si Power Integrated Circuits: An Electromagnetic Study for Trench Filling Considerations. In Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025. Institute of Electrical and Electronics Engineers Inc. 2025. p. 195-198. (Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025). doi: 10.1109/EDSSC64492.2025.11182919

Grounded Isolation Trenches in Gan-on-Si Power Integrated Circuits: An Electromagnetic Study for Trench Filling Considerations

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