GaN/Si Hetero-Structure Integration of Complementary Logic Inverter for Power Conversion

The paper demonstrates a GaN/Si hetero-structure integration of complementary logic inverter for power conversion, combining a GaN n-channel high-electron-mobility transistor (HEMT) and a Si p-channel metal-oxide-semiconductor field-effect transistor (MOSFET). The implementation of high-uniformity GaN HEMT by hydrogen treatment technology. The results show that n-FET and p-FET with the matched threshold voltage (n/p ratio = 1.7/–2.1 V), drain output current (139/–26 mA/mm) and on-state resistance (15.6/43.7 Ω∙mm). The complementary inverter (CL) achieves rail-to-rail output, low static current and fast switching performance (5 MHz). Enabled by a GaN/Si gate driver and a GaN power device of 5.6 A, the design further demonstrates 48-V-to-4.8-V floating buck conversion at MHz-level. This GaN-Si complementary circuit integration overcomes the limitations of single-material solutions for high switching frequency and high-power applications, validating its potential for future monolithic integration in power electronics.