GaN-based double-gate (DG) sub-10-nm MOSFETs: effects of gate work function

Double-gate (DG) metal–oxide–semiconductor field-effect transistors (MOSFETs) with GaN channel material are very promising for use in future high-performance low-power nanoscale device applications. In this work, GaN-based sub-10-nm DG-MOSFETs with different gate work function, Φ, were designed and their performance evaluated. Short-channel effects (SCEs) were significantly reduced by introduction of gates made of dual metals. Use of gold at the source side, having higher Φ (ΦAu=5.11eV) compared with aluminum (ΦAl=4.53eV), at the drain side enhanced the gate control over the channel and screened the effect of the drain on the channel. Dual-metal (DM) DG-MOSFETs showed better results in the nanoscale regime and were more robust to SCEs. Therefore, GaN-based sub-10-nm DM DG-MOSFETs are suitable candidates for use in future complementary metal–oxide–semiconductor (CMOS) technology.