Evaluation and Comparison of Dynamic ON-state Resistance Measurement Methods for GaN Devices

As one of the representatives of the third generation semiconductor devices, Gallium nitride (GaN) power devices are considered to have great development prospects because of their superior material properties. In the design of power electronic devices containing semiconductors, the electrical characteristics of semiconductors need to be considered, and the on-state resistance (Rdson) as one of the key device parameters is focused on by researchers. GaN devices are often faced with high-frequency and high-voltage switching state, which means that its Rdson is dynamic at this time, and the static Rdson value will lose its reference value in this case. This is not conducive to the design and loss calculation of GaN-based converters. Therefore, dynamic Rdson (dRdson) measurement has become a major impediment for semiconductor industry. This paper evaluates some advanced dRdson measurement methods and compares some specific dRdson measurement schemes from multiple aspects. This review will provide guidance and reference for the selection of dRdson measurement circuit.