Enhancement-Mode GaN Monolithic Bidirectional Switch with Integrated Gate Driver for High Temperature Application

Bidirectional switches are widely utilized in power applications, especially in AC-AC matrix converters and solid-state circuit breakers. This work demonstrates a GaN-based monolithically integrated bidirectional switch featuring a dual-gate HEMT, and drivers fabricated on the same chip. The experimental results, including both static and transient characteristics of the proposed bidirectional GaN switch, demonstrate high-temperature stability up to 250 °C. The operating frequency has been enhanced to 1 MHz at 10 V. High-temperature operation up to 250 °C as a ±311 V AC power chopper at 1 kHz is reported for the first time to the best of our knowledge. These significant potential enables the development of a high-frequency, high power density power conversion system.