Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors

Hoon Hahn Yoon; Jin Young Park; Yonas Tsegaye Megra; Ju Hwan Baek; Minuk Song; Deji Akinwande; Daewon Ha; Dong Ho Kang; Hyeon Jin Shin

doi:10.1038/s41699-025-00591-z

Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors

Hoon Hahn Yoon
, Jin Young Park
, Yonas Tsegaye Megra
, Ju Hwan Baek
, Minuk Song
, Deji Akinwande^*
, Daewon Ha^*
, Dong Ho Kang^*
, Hyeon Jin Shin^*

^*Corresponding author for this work

Gwangju Institute of Science and Technology
Department of Semiconductor Engineering
University of Texas at Austin
Samsung

Research output: Contribution to journal › Review article › peer-review

7 Citations (Scopus)

Abstract

This review presents a strategic roadmap for integrating two-dimensional materials (2DMs) into multi-bridge channel (MBC) complementary field-effect transistors (CFETs). It highlights key integration challenges, essential design considerations, and industrialization strategies for 2DM-MBC CFETs. These advances are expected to enable ultra-small, energy-efficient, and high-performance devices in the Angstrom Era that transcend the scaling limitations of silicon technology, paving the way for innovative applications in artificial intelligence (AI), the Internet of Things (IoT), and edge computing.

Original language	English
Article number	68
Journal	npj 2D Materials and Applications
Volume	9
Issue number	1
DOIs	https://doi.org/10.1038/s41699-025-00591-z
Publication status	Published - Dec 2025
Externally published	Yes

Access to Document

10.1038/s41699-025-00591-z

Cite this

@article{e0ac6e8370104012b1d83c2232b5ee75,

title = "Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors",

abstract = "This review presents a strategic roadmap for integrating two-dimensional materials (2DMs) into multi-bridge channel (MBC) complementary field-effect transistors (CFETs). It highlights key integration challenges, essential design considerations, and industrialization strategies for 2DM-MBC CFETs. These advances are expected to enable ultra-small, energy-efficient, and high-performance devices in the Angstrom Era that transcend the scaling limitations of silicon technology, paving the way for innovative applications in artificial intelligence (AI), the Internet of Things (IoT), and edge computing.",

author = "Yoon, \{Hoon Hahn\} and Park, \{Jin Young\} and Megra, \{Yonas Tsegaye\} and Baek, \{Ju Hwan\} and Minuk Song and Deji Akinwande and Daewon Ha and Kang, \{Dong Ho\} and Shin, \{Hyeon Jin\}",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2025.",

year = "2025",

month = dec,

doi = "10.1038/s41699-025-00591-z",

language = "English",

volume = "9",

journal = "npj 2D Materials and Applications",

issn = "2397-7132",

number = "1",

}

TY - JOUR

T1 - Enabling the Angstrom Era

T2 - 2D material-based multi-bridge-channel complementary field effect transistors

AU - Yoon, Hoon Hahn

AU - Park, Jin Young

AU - Megra, Yonas Tsegaye

AU - Baek, Ju Hwan

AU - Song, Minuk

AU - Akinwande, Deji

AU - Ha, Daewon

AU - Kang, Dong Ho

AU - Shin, Hyeon Jin

PY - 2025/12

Y1 - 2025/12

N2 - This review presents a strategic roadmap for integrating two-dimensional materials (2DMs) into multi-bridge channel (MBC) complementary field-effect transistors (CFETs). It highlights key integration challenges, essential design considerations, and industrialization strategies for 2DM-MBC CFETs. These advances are expected to enable ultra-small, energy-efficient, and high-performance devices in the Angstrom Era that transcend the scaling limitations of silicon technology, paving the way for innovative applications in artificial intelligence (AI), the Internet of Things (IoT), and edge computing.

AB - This review presents a strategic roadmap for integrating two-dimensional materials (2DMs) into multi-bridge channel (MBC) complementary field-effect transistors (CFETs). It highlights key integration challenges, essential design considerations, and industrialization strategies for 2DM-MBC CFETs. These advances are expected to enable ultra-small, energy-efficient, and high-performance devices in the Angstrom Era that transcend the scaling limitations of silicon technology, paving the way for innovative applications in artificial intelligence (AI), the Internet of Things (IoT), and edge computing.

UR - https://www.scopus.com/pages/publications/105012482017

U2 - 10.1038/s41699-025-00591-z

DO - 10.1038/s41699-025-00591-z

M3 - Review article

AN - SCOPUS:105012482017

SN - 2397-7132

VL - 9

JO - npj 2D Materials and Applications

JF - npj 2D Materials and Applications

IS - 1

M1 - 68

ER -

Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this