TY - JOUR
T1 - Enabling the Angstrom Era
T2 - 2D material-based multi-bridge-channel complementary field effect transistors
AU - Yoon, Hoon Hahn
AU - Park, Jin Young
AU - Megra, Yonas Tsegaye
AU - Baek, Ju Hwan
AU - Song, Minuk
AU - Akinwande, Deji
AU - Ha, Daewon
AU - Kang, Dong Ho
AU - Shin, Hyeon Jin
N1 - Publisher Copyright:
© The Author(s) 2025.
PY - 2025/12
Y1 - 2025/12
N2 - This review presents a strategic roadmap for integrating two-dimensional materials (2DMs) into multi-bridge channel (MBC) complementary field-effect transistors (CFETs). It highlights key integration challenges, essential design considerations, and industrialization strategies for 2DM-MBC CFETs. These advances are expected to enable ultra-small, energy-efficient, and high-performance devices in the Angstrom Era that transcend the scaling limitations of silicon technology, paving the way for innovative applications in artificial intelligence (AI), the Internet of Things (IoT), and edge computing.
AB - This review presents a strategic roadmap for integrating two-dimensional materials (2DMs) into multi-bridge channel (MBC) complementary field-effect transistors (CFETs). It highlights key integration challenges, essential design considerations, and industrialization strategies for 2DM-MBC CFETs. These advances are expected to enable ultra-small, energy-efficient, and high-performance devices in the Angstrom Era that transcend the scaling limitations of silicon technology, paving the way for innovative applications in artificial intelligence (AI), the Internet of Things (IoT), and edge computing.
UR - https://www.scopus.com/pages/publications/105012482017
U2 - 10.1038/s41699-025-00591-z
DO - 10.1038/s41699-025-00591-z
M3 - Review article
AN - SCOPUS:105012482017
SN - 2397-7132
VL - 9
JO - npj 2D Materials and Applications
JF - npj 2D Materials and Applications
IS - 1
M1 - 68
ER -